DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION METHOD THEREOF

• US 20100045179A1
• Filed: 11/30/2007
• Published: 02/25/2010
• Est. Priority Date: 12/05/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi, Takahashi, Kenji
• Granted Patent: US 8,164,256 B2
• Time in Patent Office: Days
• US Class Current: 313/505
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

There are provided a display apparatus which can be stably driven for a long period of time and can display an image with high definition and less image defect, and a production method thereof. The display apparatus includes a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer, wherein the active layer includes an oxide which contains In and Zn and at least a part of which is amorphous, and wherein a second insulating layer containing hydrogen in an amount of less than 3×10²¹ atoms/cm³ is disposed between the active layer and the first insulating layer.

Claims

1. A display apparatus comprising a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer, wherein the active layer comprises an oxide which contains In and Zn and at least a part of which is amorphous, and wherein a second insulating layer containing hydrogen in an amount of less than 3×

10²¹ atoms/cm³ is disposed between the active layer and the first insulating layer.

2. The display apparatus according to claim 1, wherein the hydrogen content in the second insulating layer is less than the hydrogen content in the first insulating layer.

3. The display apparatus according to claim 1, wherein the transistor has a source electrode and a drain electrode which are in contact the active layer, and wherein the second insulating layer covers a portion other than a portion being in contact with the source electrode and the drain electrode of the active layer.

4. The display apparatus according to claim 1, wherein the first insulating layer contains hydrogen in an amount of less than 3×

10²¹ atoms/cm³.

5. The display apparatus according to claim 1, wherein the matrix wiring portion and the transistor are disposed in series or in parallel, and wherein the first insulating layer and the active layer are in contact with each other through the second insulating layer.

6. A method of producing a display apparatus, comprising:

forming a matrix wiring portion having a scanning electrode line, a first insulating layer, and a signal electrode line;

forming a transistor with an active layer comprising an oxide which contains In and Zn and at least a part of which is amorphous;

forming a second insulating layer containing hydrogen in an amount of less than 3×

10²¹ atoms/cm³ between the first insulating layer and the active layer; and

forming a light-emitting layer and a pair of electrodes sandwiching the light-emitting layer.

7. The method according to claim 6, wherein the formation of the transistor is performed after the formation of the matrix wiring portion.

8. The method according to claim 6, wherein the formation of the transistor is performed after the formation of the matrix wiring portion and either one of the pair of the electrodes.

9. The method according to the claim 6, wherein the transistor has a source electrode and a drain electrode which are in contact the active layer, and wherein the formation of the second insulating layer is performed so as to cover a portion other than a portion being in contact with the source electrode and the drain electrode of the active layer.