DIFFUSION BARRIER LAYER FOR MEMS DEVICES
First Claim
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1. A method of substantially inhibiting any portion of a first metallic layer from mixing with any portion of a second metallic layer in a MEMS device mechanical membrane, comprising positioning a diffusion barrier layer between the first and second metallic layers.
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Abstract
Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
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Citations
32 Claims
- 1. A method of substantially inhibiting any portion of a first metallic layer from mixing with any portion of a second metallic layer in a MEMS device mechanical membrane, comprising positioning a diffusion barrier layer between the first and second metallic layers.
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9. A method of manufacturing a MEMS device, comprising:
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depositing a first metallic layer; depositing a diffusion barrier layer onto the first metallic layer; depositing a second metallic layer onto the diffusion barrier layer, wherein the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer; and etching a same pattern in the first metallic layer, diffusion barrier layer, and second metallic layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of manufacturing an interferometric modulator, comprising:
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depositing a first metallic layer; depositing a diffusion barrier layer onto the first metallic layer; depositing a second metallic layer onto the diffusion barrier layer, wherein the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer; and etching a same pattern in the second metallic layer, the diffusion barrier, and the first metallic layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of manufacturing a movable electrode in a MEMS device having a desired tensile stress, comprising:
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determining a desired tensile stress or range of tensile stress for the movable electrode; forming one or more layers comprising a material having tensile stress; and forming one or more layers comprising a material having compressive stress adjacent to the tensile stress materials, whereby combination of the tensile stress of the compressive stress provide the desired tensile stress or range of tensile stress for the movable electrode. - View Dependent Claims (28, 29, 30, 31, 32)
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Specification