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METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE

  • US 20100047974A1
  • Filed: 08/20/2009
  • Published: 02/25/2010
  • Est. Priority Date: 08/21/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a thin film transistor array substrate, comprising:

  • forming gate electrodes, gate lines and gate pads on a substrate with the use of a first mask;

    forming a gate insulation film, a semiconductor layer, and a metal layer on the substrate;

    forming a first photoresist pattern on the metal layer with the use of a second mask;

    forming first contact holes for the gate pads with the use of the first photoresist pattern;

    ashing the first photoresist pattern to form a second photoresist pattern, and forming patterns for data pads, data lines, and thin film transistors with the use of the second photoresist pattern;

    ashing the second photoresist pattern to form a third photoresist pattern, and forming contact holes for source/drain electrodes and second contact holes for the gate pads with the use of the third photoresist pattern;

    forming a protective film on the substrate and providing a fourth photoresist pattern on the protective film with the use of a third mask;

    forming third contact holes for the gate pads, contact holes for the data pads, gate lines, and drain electrodes, and contact holes for pixel electrodes, with the use of the fourth photoresist pattern;

    forming a transparent conduction film on the fourth photoresist pattern having the contact holes, to provide first transparent electrodes for the gate pads into the third contact holes, second transparent electrodes into the contact holes for the data pads, third transparent electrodes into the contact holes for the pixel electrodes, fourth transparent electrodes into the contact holes for the gate lines, and fifth transparent electrodes into the contact holes for the drain electrodes; and

    removing the fourth photoresist pattern,wherein the third mask includes transmissive regions transmitting lights, semi-transmissive transmissive regions partially transmitting and intercepting the lights, and interceptive regions intercepting the lights, and the three regions have different transmittances.

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