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METHOD OF FABRICATING A HIGH Q FACTOR INTEGRATED CIRCUIT INDUCTOR

  • US 20100047990A1
  • Filed: 11/05/2009
  • Published: 02/25/2010
  • Est. Priority Date: 01/29/2004
  • Status: Active Grant
First Claim
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1. A method of forming an inductor, comprising:

  • (a) forming a dielectric layer on a top surface of a substrate;

    after (a), (b) forming a lower trench in said dielectric layer;

    after (b), (c) forming a resist layer on a top surface of said dielectric layer;

    after (c), (d) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and

    after (d), (e) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor.

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