METHOD OF FABRICATING A HIGH Q FACTOR INTEGRATED CIRCUIT INDUCTOR
First Claim
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1. A method of forming an inductor, comprising:
- (a) forming a dielectric layer on a top surface of a substrate;
after (a), (b) forming a lower trench in said dielectric layer;
after (b), (c) forming a resist layer on a top surface of said dielectric layer;
after (c), (d) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and
after (d), (e) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor.
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Abstract
A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.
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Citations
16 Claims
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1. A method of forming an inductor, comprising:
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(a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in said dielectric layer; after (b), (c) forming a resist layer on a top surface of said dielectric layer; after (c), (d) forming an upper trench in said resist layer, said upper trench aligned to said lower trench, a bottom of said upper trench open to said lower trench; and after (d), (e) completely filling said lower trench and at least partially filling said upper trench with a conductor in order to form said inductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification