LOCALIZED ANNEALING DURING SEMICONDUCTOR DEVICE FABRICATION
First Claim
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1. In the process for the fabrication of semiconductor devices being fabricated on a substrate and including at least one metal layer and a plurality of semiconductor layers on the substrate, the improvement comprising:
- removing the substrate and applying a second substrate to the semiconductor devices, andannealing the at least one metal layer by application of a beam of electromagnetic radiation on the least one metal layer.
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Accused Products
Abstract
A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.
89 Citations
34 Claims
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1. In the process for the fabrication of semiconductor devices being fabricated on a substrate and including at least one metal layer and a plurality of semiconductor layers on the substrate, the improvement comprising:
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removing the substrate and applying a second substrate to the semiconductor devices, and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the least one metal layer. - View Dependent Claims (2, 4, 6, 9, 11, 12, 13, 16, 17)
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3. (canceled)
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5. (canceled)
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7-8. -8. (canceled)
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10. (canceled)
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14-15. -15. (canceled)
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18. A process for the fabrication of semiconductor devices being fabricated on a substrate and including at least one metal layer, the process comprising:
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removing the substrate and applying a second substrate to the second semiconductor devices; and annealing the at least one metal layer by application of a beam of electromagnetic radiation directly on the at least one metal layer. - View Dependent Claims (19, 21, 23, 26, 28, 29, 30, 33, 34)
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20. (canceled)
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22. (canceled)
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24-25. -25. (canceled)
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27. (canceled)
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31-32. -32. (canceled)
Specification