SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20100048022A1
• Filed: 06/24/2009
• Published: 02/25/2010
• Est. Priority Date: 08/25/2008
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: KUBOTA, Hiroshi
• Application Number:
  US12/490,681
• Publication Number:
  US 20100048022A1
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C23C 16/042 using masks
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/02087 Cleaning of wafer edges
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/3146 Carbon layers, e.g. diamond-like layers
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles

Abstract

A semiconductor manufacturing apparatus that forms a carbon film on a wafer by plasma enhanced chemical vapor deposition includes a body having a top opening; a stage provided within the body for placement of the wafer; a showerhead that encloses the top opening and that introduces a deposition gas or an etch gas; and a gas delivery system including a central gas inlet that introduces gas toward a central portion of the wafer from a central portion of the showerhead, and a peripheral gas inlet that introduces gas toward a bevel of the wafer from an outer peripheral portion of the showerhead, wherein the gas delivery system, after activating the etch gas outside the body, delivers the activated etch gas toward the bevel of the wafer to selectively remove a portion of the carbon film formed on the bevel of the wafer.

Claims

1. A semiconductor manufacturing apparatus that forms a carbon film on a wafer by plasma enhanced chemical vapor deposition, comprising:

a body having a top opening;

a stage provided within the body for placement of the wafer;

a showerhead that encloses the top opening and that introduces a deposition gas or an etch gas; and

a gas delivery system including a central gas inlet that introduces gas toward a central portion of the wafer from a central portion of the showerhead, and a peripheral gas inlet that introduces gas toward a bevel of the wafer from an outer peripheral portion of the showerhead,

wherein the gas delivery system, after activating the etch gas outside the body, delivers the activated etch gas toward the bevel of the wafer to selectively remove a portion of the carbon film formed on the bevel of the wafer.

2. The apparatus according to claim 1, wherein the gas delivery system further delivers an inert gas toward the central portion of the wafer from the central gas inlet when delivering the etch gas activated outside the body toward the bevel of the wafer from the peripheral gas inlet.

3. The apparatus according to claim 1, wherein the gas delivery system further allows delivery of the etch gas into the body from the peripheral gas inlet and the central gas inlet for cleaning an interior of the body.

4. The apparatus according to claim 1, wherein the showerhead includes a protrusion having a first side protruding into the body so as to confront the stage and a second side defining a recess opening up toward an exterior of the body, a partition element that encloses an upper opening of the recess, and a cylindrical partition wall that extends from an underside of the partition element to partition the recess into the central gas inlet and the peripheral gas inlet.

5. The apparatus according to claim 4, wherein the showerhead further comprises a disc-shaped dispersion plate disposed within the central gas inlet that promotes gas dispersion and a ring-shaped dispersion plate disposed within the peripheral gas inlet that promotes gas dispersion.

6. The apparatus according to claim 1, wherein the showerhead serves as an upper electrode and is connected to a first terminal of a high-frequency power supply having a second terminal that is earthed, and wherein the stage that is earthed serves as a lower electrode.

7. The apparatus according to claim 1, further comprising an exhaust element in ring shape disposed at a portion of an inner periphery of the body that confronts an outer periphery of the stage.

8. The apparatus according to claim 7, wherein the exhaust element includes a multiplicity of exhaust holes defined on a surface thereof and an annular communication path defined in the exhaust element in communication with the multiplicity of exhaust holes, and wherein the body includes an exhaust port provided at a portion of a peripheral wall of the body placed in abutment with the exhaust element so as to be in communication with the communication path of the exhaust element, the exhaust port being connected to an exhaust pump.

9. The apparatus according to claim 8, wherein the multiplicity of exhaust holes located relatively closer to the exhaust port are spaced farther apart from each other whereas the multiplicity of exhaust holes located relatively farther from the exhaust port are spaced closer together from each other.

10. The apparatus according to claim 1, further comprising a gas conduit that connects the peripheral gas inlet with a gas source of the etch gas, the gas conduit having a reaction chamber provided at an intermediate portion thereof.

11. The apparatus according to claim 10, wherein the reaction chamber activates the etch gas delivered thereto by microwave discharge.

12. The apparatus according to claim 1, wherein the etch gas comprises O₂ gas.

13. The apparatus according to claim 2, wherein the inert gas comprises at least one of N₂ gas and Ar gas.

14. A method of manufacturing a semiconductor device in which a carbon film formation with plasma enhanced chemical vapor deposition is performed, comprising:

forming the carbon film on a wafer by introducing a deposition gas from a central gas inlet positioned at a central portion of a showerhead and a peripheral gas inlet positioned at a peripheral portion of the showerhead, the showerhead enclosing an upper opening of a body of a plasma enhanced chemical vapor deposition apparatus, and

etching away the carbon film formed on a bevel of the wafer by delivering a first etch gas activated outside the body toward the bevel of the wafer from the peripheral gas inlet.

15. The method according to claim 14, wherein an inert gas is delivered toward a central portion of the wafer from the central gas inlet when etching away the carbon film formed on the bevel of the wafer.

16. The method according to claim 15, wherein the inert gas comprises at least one of N₂ gas and Ar gas.

17. The method according to claim 14, wherein the deposition gas comprises C₃H₆ gas and He gas and the first etch gas comprises O₂ gas.

18. The method according to claim 14, wherein the carbon film formed on the bevel of the wafer is etched away without generating discharge between the showerhead and a stage provided for placement of the wafer.

19. The method according to claim 14, further comprising cleaning an interior of the body with an activated etch gas including:

introducing a second etch gas into the body from the central gas inlet;

introducing a third etch gas activated outside the body into the body from the peripheral gas inlet; and

generating discharge between the showerhead and a stage provided for wafer placement by turning on a high-frequency power supply to activate the second etch gas introduced into the body.

20. The method according to claim 14, further comprising cleaning an interior of the body with an activated etch gas including:

introducing the activated etch gas activated outside the body into the body from the central gas inlet;

introducing the activated etch gas activated outside the body into the body from the peripheral gas inlet; and

preventing discharge between the showerhead and a stage provided for wafer placement.