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Smooth and vertical semiconductor fin structure

  • US 20100048027A1
  • Filed: 08/21/2008
  • Published: 02/25/2010
  • Est. Priority Date: 08/21/2008
  • Status: Active Grant
First Claim
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1. A method for processing a semiconductor fin structure, comprising the steps of:

  • thermal annealing said fin structure in an ambient containing an isotope of hydrogen; and

    etching said fin structure in a crystal-orientation dependent manner, wherein said thermal annealing step is performed earlier than said etching step.

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