Smooth and vertical semiconductor fin structure
First Claim
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1. A method for processing a semiconductor fin structure, comprising the steps of:
- thermal annealing said fin structure in an ambient containing an isotope of hydrogen; and
etching said fin structure in a crystal-orientation dependent manner, wherein said thermal annealing step is performed earlier than said etching step.
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Abstract
A method for processing a semiconductor fin structure is disclosed. The method includes thermal annealing a fin structure in an ambient containing an isotope of hydrogen. Following the thermal annealing step, the fin structure is etched in a crystal-orientation dependent, self-limiting, manner. The crystal-orientation dependent etch may be selected to be an aqueous solution containing ammonium hydroxide (NH4OH). The completed fin structure has smooth sidewalls and a uniform thickness profile. The fin structure sidewalls are {110} planes.
342 Citations
16 Claims
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1. A method for processing a semiconductor fin structure, comprising the steps of:
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thermal annealing said fin structure in an ambient containing an isotope of hydrogen; and etching said fin structure in a crystal-orientation dependent manner, wherein said thermal annealing step is performed earlier than said etching step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a field effect transistor (FET), comprising:
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processing a fin-type body, said processing comprises; thermal annealing said fin-type body in an ambient containing an isotope of hydrogen; etching said fin-type body in a crystal-orientation dependent manner;
wherein saidthermal annealing is performed earlier than said etching; and wherein said FET is characterized as being a FinFET device. - View Dependent Claims (14, 15)
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16. A method for fabricating a field effect transistor (FET), comprising:
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processing a fin-type body having sidewalls, wherein said sidewalls are substantially parallel to {110} crystallographic planes; thermal annealing said fin-type body at a temperature of between about 600°
C. and about 1100°
C., in an ambient containing an isotope of hydrogen, and at a pressure of between about 1 Torr and about 1000 Torr;etching said fin-type body in an aqueous solution containing ammonium hydroxide (NH4OH), wherein said thermal annealing is performed earlier than said etching; and wherein said FET is characterized as being a silicon FinFET device.
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Specification