BACK CONTACT SOLAR CELL MODULES

• US 20100051085A1
• Filed: 08/27/2009
• Published: 03/04/2010
• Est. Priority Date: 08/27/2008
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Mungekar, Hemant, Guo, Hsiu-Wu (Jason), Mishra, Rohit, Weidman, Timothy W., Gay, Charles, Wijekoon, Kapila P.
• Application Number:
  US12/549,291
• Publication Number:
  US 20100051085A1
• Time in Patent Office: Days
• US Class Current: 136/244
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/02245 for metallisation wrap-through [MWT] type solar cells
• CPC Class Codes: H01L 31/0516 specially adapted for interconnection of back-contact solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell.

Claims

1. A flexible interconnect structure used to electrically connect portions of a first solar cell device to a second solar cell device, comprising:

a first conductive layer;

a second conductive layer; and

a dielectric material separating the first conductive layer from the second conductive layer, wherein the first conductive layer comprises one or more first interconnection regions that are configured to contact one or more first conductive features formed on a substrate surface of a solar cell substrate and the second conductive layer comprises one or more second interconnection regions that are configured to contact one or more second conductive features formed on the substrate surface, and

wherein the solar cell substrate has an n-type region that is in communication with the one or more first conductive features and a p-type region that is in communication with the one or more second conductive features.

2. The interconnect structure of claim 1, wherein the dielectric material is a material selected from a group consisting of polytetrafluoroethylene, polyethylene terephthalate, polyimide, nylon and polyvinyl chloride.

3. The interconnect structure of claim 1, wherein the thickness of the first conductive layer and the second conductive layer in the flexible interconnect structure is between about 20,000 Å

and about 500,000 Å and

the thickness of the one or more first conductive features and the one or more second conductive features are less than the thickness of the first conductive layer and the second conductive layer.

4. The interconnect structure of claim 1, wherein the solar cell substrate has a higher mechanical stiffness than the first flexible interconnect structure in a direction that is parallel to the substrate surface.

5. The interconnect structure of claim 1, wherein the first and second conductive layers in the flexible interconnect structure and the one or more first conductive features and the one or more second conductive features on the solar cell substrates are adapted to form part of an electrical circuit through which the current generated in the first solar cell device is configured to flow, and the electrical resistance of the electrical circuit formed through the first conductive layer or the second conductive layer is less than the electrical resistance through the one or more first conductive features or the one or more second conductive features.

6. A method of forming a solar cell device, comprising:

positioning a flexible interconnect structure over a solar cell substrate so that a portion of a first conductive layer of the flexible interconnect structure is in electrical communication with an n-type region disposed on a solar cell substrate and a portion of a second conductive layer is in electrical communication with a p-type region disposed on the solar cell substrate,

wherein a dielectric material disposed in the flexible interconnect structure separates the first conductive layer from the second conductive layer, and wherein the portion of the first conductive layer and the portion of the second conductive layer are in contact with a first surface of the flexible interconnect structure.

7. The method of claim 6, wherein the solar cell substrate has a higher mechanical stiffness than the flexible interconnect structure in a direction that is parallel to a surface of the solar cell substrate on which the n-type region and the p-type region are disposed.

8. The method of claim 6, wherein the dielectric material is a material selected from a group consisting of polytetrafluoroethylene, polyethylene terephthalate, polyimide, nylon and polyvinyl chloride.

9. The method of claim 6, wherein the thickness of the first conductive layer and the second conductive layer in the flexible interconnect structure is between about 20,000 Å

and about 500,000 Å and

the thickness of the first conductive feature and the second conductive feature is less than the thickness of the first conductive layer and the second conductive layer.

10. The method of claim 6, wherein the n-type region is in electrical communication with a first conductive feature disposed on a surface of the solar cell substrate and the p-type region is in electrical communication with a second conductive feature disposed on the surface, and the method further comprises:

disposing a conductive material on a region of the first conductive feature and on two or more regions of the second conductive feature, wherein at least a portion of the conductive material is disposed between the flexible interconnect structure and the surface of the substrate, and the region of conductive material disposed on the first conductive feature is at least a first distance from the two or more regions of conductive material deposited on the second conductive feature.

11. The method of claim 10, wherein the first distance is greater than about 0.1 mm.

12. A method of forming a solar cell device, comprising:

receiving a solar cell substrate having an n-type region and a p-type region that form part of a junction that is adapted to convert light into electrical energy, wherein the n-type region is in electrical communication with a first conductive feature disposed on a surface of the solar cell substrate and the p-type region is in electrical communication with a second conductive feature disposed on the surface;

positioning an interconnect structure having a first layer, a first hole formed through the first layer, a second layer, a second hole formed through the second layer and a dielectric material separating the first layer from the second layer against the surface of the solar cell substrate so that the first layer is in electrical communication with the first conductive feature and the second layer is in electrical communication with the second conductive feature; and

depositing a conductive material in the first hole and the second hole so that the conductive material creates a first conductive path between the first layer and the first conductive feature, and a second conductive path between the second layer and the second conductive feature.

13. The method of claim 12, wherein the conductive material is selected from a group consisting of tin (Sn), silver (Ag), lead (Pb) and a conductive polymer.

14. The method of claim 12, wherein the interconnect structure is disposed over the surface of the substrate and a region of the interconnect structure disposed between the first conductive feature and the second conductive features is not substantially coupled to the surface of the substrate.

15. A method of forming a solar cell device, comprising:

forming an enclosed region between one or more walls of an enclosure and an interconnect structure, where in the interconnect structure comprises;

a first layer;

a second layer;

a dielectric material disposed between the first layer and the second layer; and

a first hole and a second hole that are each in communication with the enclosed region and are formed through a portion of the interconnect structure;

positioning a first conductive feature formed on a solar cell substrate adjacent to the first layer, and a second conductive feature formed on the solar cell substrate adjacent to the second layer, wherein the first conductive feature is in electrical communication with an n-type region formed on the solar cell substrate and the second conductive feature is in electrical communication with a p-type region formed on the solar cell substrate;

heating the first conductive feature, the first layer, the second conductive feature and the second layer so that a bond is formed between the first conductive feature and the first layer and the second conductive feature and the second layer; and

urging the first conductive feature against the first layer and the second conductive feature against the second layer during the heating process.

16. The method of claim 15, wherein urging the first conductive feature against the first layer and the second conductive feature against the second layer during the heating process, comprises evacuating the enclosed region to form a sub-atmospheric pressure within the enclosed region and in the first and second holes to cause atmospheric pressure to urge the first conductive feature against the first layer and the second conductive feature against the second layer during the heating process.

17. The method of claim 15, wherein the first hole is formed through a portion of the first layer and the second hole is formed through a portion of the second layer.

18. A method of forming a solar cell device, comprising:

forming a solar cell substrate having an n-type region and a p-type region that form part of a junction that is adapted to convert light into electrical energy, wherein the n-type region is in electrical communication with a first conductive feature disposed on a surface of the solar cell substrate and the p-type region is in electrical communication with a second conductive feature disposed on the surface;

depositing a first compliant layer over the first conductive feature and the second conductive feature, wherein the first complaint layer has a first hole and a second hole formed therein;

depositing a conductive material in the first hole and the second hole, wherein the conductive material disposed in the first hole is in electrical communication with the first conductive feature and the conductive material disposed in the second hole is in electrical communication with the second conductive feature; and

positioning an interconnect structure having a first layer, a second layer, and a dielectric material separating the first layer from the second layer over a surface of the first compliant layer so that the first layer is in electrical communication with the first conductive feature through the first conductive material disposed in the first hole, and the second layer is in electrical communication with the second conductive feature through the first conductive material disposed in the second hole.

19. The method of claim 18, wherein the first conductive material comprises a metal selected from a group consisting of tin (Sn), silver (Ag), lead (Pb) and a conductive polymer.

20. The method of claim 18, wherein the first compliant layer is selected from a group consisting of silicone and epoxy.

21. The method of claim 18, further comprising heating the interconnect structure to form a bond between the solar cell substrate, the first compliant layer and the interconnect structure.

22. A plurality of interconnected solar cells, comprising:

a first solar cell assembly comprising;

a first solar cell substrate having an n-type region and a p-type region that are part of a junction that is adapted to convert light into electrical energy, wherein the n-type region is in electrical communication with a first conductive feature disposed on a surface of the first solar cell substrate and the p-type region is in electrical communication with a second conductive feature disposed on the surface; and

a first flexible interconnect structure having a first layer, a second layer and a dielectric material separating the first layer from the second layer, wherein the first layer is in electrical communication with the first conductive feature formed on the first solar cell substrate and the second layer is in electrical communication with a second conductive feature formed on the first solar cell substrate; and

a second solar cell assembly comprising;

a second solar cell substrate having an n-type region and a p-type region that are part of a junction that is adapted to convert light into electrical energy, wherein the n-type region is in electrical communication with a first conductive feature disposed on a surface of the second solar cell substrate and the p-type region is in electrical communication with a second conductive feature disposed on the surface; and

a second flexible interconnect structure having a first layer, a second layer and a dielectric material separating the first layer from the second layer, wherein the first layer is in electrical communication with the first conductive feature formed on the second solar cell substrate and the second layer is in electrical communication with a second conductive feature formed on the second solar cell substrate,

wherein the first layer in the first flexible interconnect structure is electrically connected to the first layer or the second layer of the second flexible interconnect structure.

23. The plurality of interconnected solar cells of claim 22, wherein the dielectric material in the first and second flexible interconnect structures is a material selected from a group consisting of polytetrafluoroethylene, polyethylene terephthalate, polyimide, nylon and polyvinyl chloride.

24. The plurality of interconnected solar cells of claim 22, wherein the thickness of the first conductive features and the second conductive features disposed on the surface of the first solar cell substrate and second solar cell substrate is between about 20 Å

and about 5000 Å

, and the thickness of the first layer and the second layer in the second flexible interconnect structure and second flexible interconnect structure is between about 20,000 Å and

about 500,000 Å

.

25. The plurality of interconnected solar cells of claim 22, wherein the first and second layers in the first and second flexible interconnect structures and the first conductive feature and the second conductive feature on the first and second solar cell substrates form part of an electrical circuit through which the generated current from the plurality of interconnected solar cells is configured to flow, and the electrical resistance of the electrical circuit formed through the first layer or the second layer is less than the electrical resistance through the first conductive feature or the second conductive feature.

26. The plurality of interconnected solar cells of claim 22, wherein the first solar cell substrate has a higher mechanical stiffness than the first flexible interconnect structure in a direction that is parallel to the surface of the first solar cell substrate.