Conducting Layer Jump Connection Structure

• US 20100051335A1
• Filed: 08/31/2009
• Published: 03/04/2010
• Est. Priority Date: 09/01/2008
• Status: Abandoned Application

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Feng, Shun-Fa, Chen, Chien-Li, Yeh, Yan-Lin
• Application Number:
  US12/550,758
• Publication Number:
  US 20100051335A1
• Time in Patent Office: Days
• US Class Current: 174/257
• CPC Class Codes: G02F 1/1345 Conductors connecting electrodes to cell terminals

Abstract

A conducting layer jump connection structure used in a circuit device includes a substrate, a first conducting layer, a first insulating layer, a second conducting layer, a second insulating layer, a jump connection layer, a first via, and plural second vias. The first conducting layer covers the substrate. The first insulating layer covers the first conducting layer. The second conducting layer partially covers the first insulating layer. The second insulating layer covers the second conducting layer and the first insulating layer exposed by the second conducting layer. The jump connection layer covers the second insulating layer. The first via is formed on the first conducting layer and between two opposite second conducting portions of the second conducting layer. The first via penetrates through both the second insulating layer and the first insulating layer. The second vias are formed on the second conducting layer and penetrate through the second insulating layer. The first conducting layer and the second conducting layer are connected to the jump connection layer through the first via and the second vias, respectively.

Claims

1. A conducting layer jump connection structure, comprising:

a substrate;

a first conducting layer covering the substrate;

a first insulating layer covering the first conducting layer;

a second conducting layer partially covering the first insulating layer;

a second insulating layer covering the second conducting layer and the first insulating layer exposed by the second conducting layer;

a jump connection layer covering the second insulating layer;

a first via formed on the first conducting layer exposed by the second conducting layer and between two opposite second conducting portions of the second conducting layers, wherein the first via penetrates through both the second insulating layer and the first insulating layer; and

a plurality of second vias formed on the second conducting layer and penetrating through the second insulating layer;

wherein the first conducting layer and the second conducting layer are electrically connected to the jump connection layer by the conductive material filled in the first via and the second vias, respectively.

2. The conducting layer jump connection structure of claim 1, wherein the first conducting layer includes metal.

3. The conducting layer jump connection structure of claim 1, wherein the second conducting layer includes metal.

4. The conducting layer jump connection structure of claim 1, wherein the jump connection layer includes indium tin oxide.

5. The conducting layer jump connection structure of claim 1, wherein the first via and the second vias are filled with a conductive material including indium tin oxide.

6. The conducting layer jump connection structure of claim 1, wherein the first insulating layer includes metal oxide.

7. The conducting layer jump connection structure of claim 1, wherein one second via is disposed on each of three adjacent sides of the first via so that the second conducting layer corresponding to the second vias forms a U shaped unit.

8. The conducting layer jump connection structure of claim 7, wherein a plurality of U shaped units are disposed side by side so that an opening of each U shaped unit faces a same direction.

9. The conducting layer jump connection structure of claim 1, wherein the second conducting layer corresponding to the first via and the second vias is configured as a U shaped unit, wherein a plurality of U shaped units are disposed so that openings of adjacent U shaped units face opposite directions.

10. The conducting layer jump connection structure of claim 1, wherein the second conducting layer is distributed as a fishbone configuration, the second vias are disposed in a backbone area and splint bone areas of the fishbone configuration, and the first via is disposed between the splint bone areas of the fishbone configuration.

11. The conducting layer jump connection structure of claim 1, wherein the second conducting layer is configured as a first column and a second column, a plurality of first vias are disposed between the first column and the second column.

12. The conducting layer jump connection structure of claim 11, wherein the second conducting layer further respectively extends form the first column and the second column to form a plurality of U shaped units, wherein one first via is disposed in a central opening area of the U shaped unit.

13. The conducting layer jump connection structure of claim 1, wherein the second conducting layer is configured as a zigzag structure, wherein a plurality of first vias are disposed in recess areas of the zigzag structure.

14. The conducting layer jump connection structure of claim 13, wherein the first via and adjacent second via are paired off so that the first vias and the second vias are interlaced in pair with respect to a central axis of the zigzag structure.

15. The conducting layer jump connection structure of claim 13, wherein the zigzag structure includes a plurality of bodies and a plurality of connecting parts, the bodies are linearly disposed and spaced apart, the connecting parts are disposed between the adjacent bodies, a first end and a second end of one body are respectively electrically connected to a first end of a previous body and a second end of a next body by the connecting parts, wherein the second vias are located corresponding to the bodies.

16. The conducting layer jump connection structure of claim 15, the length of the body is larger than the width of the connecting part.

17. The conducting layer jump connection structure of claim 13, wherein on top of the jump connection layer is an electrical pad.

18. A circuit device, comprising:

a substrate;

a first conducting layer covering the substrate;

a first insulating layer covering the first conducting layer;

a second conducting layer partially covering the first insulating layer;

a second insulating layer covering the second conducting layer and the first insulating layer exposed by the second conducting layer;

a jump connection layer covering the second insulating layer;

a plurality of first vias formed on the first conducting layer exposed by the second conducting layer, wherein the first via penetrates through both the second insulating layer and the first insulating layer; and

a plurality of second vias formed on the second conducting layer and penetrating through the second insulating layer;

wherein the first conducting layer and the second conducting layer are connected to the jump connection layer by the conductive material filled in the first via and the second vias, respectively.

19. The circuit device of claim 18, wherein the first conducting layer includes metal.

20. The circuit device of claim 18, wherein the second conducting layer includes metal.

21. The circuit device of claim 18, wherein the jump connection layer includes indium tin oxide.

22. The circuit device of claim 18, wherein the first via and the second vias are filled with a conductive material including indium tin oxide.

23. The circuit device of claim 18, wherein the second insulating layer includes metal oxide.

24. The circuit device of claim 18, wherein one second via is disposed on each of three adjacent sides of the first via so that the second conducting layer corresponding to the second vias forms a U shaped unit.

25. The circuit device of claim 24, wherein a plurality of U shaped units are disposed side by side so that an opening of each U shaped unit faces a same direction.

26. The circuit device of claim 24, wherein a plurality of U shaped units are disposed side by side so that openings of adjacent U shaped units face opposite directions.

27. The circuit device of claim 18, wherein the second conducting layer is distributed as a fishbone configuration, the second vias are disposed in a backbone area and splint bone areas of the fishbone configuration, and the first via is disposed between the splint bone areas of the fishbone configuration.

28. The circuit device of claim 18, wherein the second conducting layer is configured as a first column and a second column, a plurality of first vias are disposed between the first column and the second column.

29. The circuit device of claim 28, wherein the second conducting layer further respectively extends form the first column and the second column to form a plurality of U shaped units, wherein one first via is disposed in a central opening area of the U shaped unit.

30. The circuit device of claim 18, wherein the second conducting layer is configured as a zigzag structure, wherein a plurality of first vias are disposed in recess areas of the zigzag structure.

31. The circuit device of claim 30, wherein the first via and adjacent second via are paired off so that the first vias and the second vias are interlaced in pair with respect to a central axis of the zigzag structure.

32. The circuit device of claim 30, wherein the zigzag structure includes a plurality of bodies and a plurality of connecting parts, the bodies are linearly disposed and spaced apart, the connecting parts are disposed between the adjacent bodies, a first end and a second end of one body are respectively electrically connected to a first end of a previous body and a second end of a next body by the connecting parts, wherein the second vias are located corresponding to the bodies.

33. The circuit device of claim 32, the length of the body is larger than the width of the connecting part.

34. The circuit device of claim 30, wherein on top of the jump connection layer is an electrical pad.