Organischer Feldeffekt Transistor

• US 20100051923A1
• Filed: 08/03/2009
• Published: 03/04/2010
• Est. Priority Date: 08/04/2008
• Status: Active Grant

• Current Assignee: Novaled AG
• Original Assignee: Novaled AG
• Inventors: Huang, Qiang, Denker, Ulrich, Canzler, Tobias
• Granted Patent: US 8,212,241 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/474 the gate dielectric comprising a multilayered structure
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Abstract

The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Claims

1. An organic field-effect transistor comprising:

a gate electrode, a drain electrode and a source electrode,

an active layer of organic material which is configured to form an electric line channel during the operation,

a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer comprising a molecular dopant material whose molecules consist of two or more atoms and which is an electrical dopant for the organic material of the active layer and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or adjacent to the boundary surface region.

2. The field-effect transistor according to claim 1, wherein the dopant material layer is formed adjacent to the boundary surface region in the dielectric layer.

3. The field-effect transistor according to claim 1, wherein the dopant material layer is formed adjacent to the boundary surface region in the active layer.

4. The field-effect transistor according to claim 1, wherein the dopant material layer is formed at a spaced disposition of about one to about three monolayers.

5. The field-effect transistor according to claim 1, wherein the dopant material layer is formed with a thickness of about 0.5 nm to about 5 nm.

6. The field-effect transistor according to claim 1, wherein the molecular dopant material has a molar mass between about 100 g/mol and about 2000 g/mol.

7. The field-effect transistor according to claim 1, wherein the molecular dopant material is metal-free.

8. The field-effect transistor according to claim 1, wherein the molecular dopant material has a glass transition temperature (Tg) of more than about 100°

C.