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THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME

  • US 20100051937A1
  • Filed: 02/08/2008
  • Published: 03/04/2010
  • Est. Priority Date: 02/28/2007
  • Status: Active Grant
First Claim
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1. A thin-film transistor comprising at least:

  • a substrate;

    a gate electrode;

    a gate insulating layer;

    an oxide semiconductor layer;

    a source electrode;

    a drain electrode; and

    a protective layer;

    wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±

    15 nm.

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