THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
First Claim
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1. A thin-film transistor comprising at least:
- a substrate;
a gate electrode;
a gate insulating layer;
an oxide semiconductor layer;
a source electrode;
a drain electrode; and
a protective layer;
wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±
15 nm.
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Abstract
There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.
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Citations
6 Claims
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1. A thin-film transistor comprising at least:
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a substrate; a gate electrode; a gate insulating layer; an oxide semiconductor layer; a source electrode; a drain electrode; and a protective layer; wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±
15 nm. - View Dependent Claims (2, 6)
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3. A method of manufacturing a thin-film transistor, comprising at least:
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forming a gate electrode on a substrate; forming a gate insulating layer; forming an oxide semiconductor layer; forming a source electrode and a drain electrode; and forming a protective layer; wherein the forming of the protective layer is performed by a sputtering method in an oxygen-containing atmosphere. - View Dependent Claims (4, 5)
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Specification