DISPLAY DEVICE
First Claim
1. A display device in which thin film transistors each of which has a semiconductor layer formed of a metal oxide semiconductor layer are mounted on a substrate, whereina silicon nitride film is arranged between the substrate and the thin film transistors as a barrier layer, anda gate insulation film of the thin film transistor is formed of a silicon nitride film formed by a plasma CVD method.
3 Assignments
0 Petitions
Accused Products
Abstract
A display device in which an OFF current of a thin film transistor formed of metal oxide semiconductor provided to the display device is further lowered thus ensuring the stability of an operation of the thin film transistor is provided. In a display device in which thin film transistors each of which has a semiconductor layer formed of a metal oxide semiconductor layer are mounted on a substrate, a silicon nitride film is arranged between the substrate and the thin film transistors as a barrier layer, and a gate insulation film of the thin film transistor is formed of a silicon nitride film formed by a plasma CVD method.
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Citations
9 Claims
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1. A display device in which thin film transistors each of which has a semiconductor layer formed of a metal oxide semiconductor layer are mounted on a substrate, wherein
a silicon nitride film is arranged between the substrate and the thin film transistors as a barrier layer, and a gate insulation film of the thin film transistor is formed of a silicon nitride film formed by a plasma CVD method.
Specification