ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

• US 20100051942A1
• Filed: 11/10/2009
• Published: 03/04/2010
• Est. Priority Date: 05/17/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: HWANG, Euk-che, KIM, Tae-sang, RYU, Myung-kwan, JUNG, Ji-sim, SON, Kyung-seok, KWON, Jang-yeon, PARK, Kyung-bae, LEE, Sang-yoon, KIM, Jun-seong
• Granted Patent: US 7,915,610 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Claims

1. A thin film transistor comprising:

a substrate;

a channel layer comprising ZnO disposed on the substrate;

a gate disposed between the substrate and the channel layer;

a gate insulating layer disposed between the channel layer and the gate;

a source electrode and a drain electrode disposed on both sides of the channel layer; and

a passivation layer covering the channel layer, the source electrode, and the drain electrode,

wherein the channel layer comprises a chloride, and wherein the chloride is distributed in a region near an upper surface of the channel layer.

2. The thin film transistor of claim 1, wherein the gate insulating layer comprises SiNx.

3. The thin film transistor of claim 1, wherein the channel layer comprises gallium-indium-zinc-oxide.

4. The thin film transistor of claim 1, wherein the chloride is selected from the group consisting of GaCl₃, InCl₃, ZnCl₂, and a combination comprising at least one of the foregoing chlorides.

5. The thin film transistor of claim 4, wherein the channel layer comprises gallium-indium-zinc-oxide.

6. The thin film transistor of claim 1, wherein the chloride is gallium-indium-zinc-chloride.