AMORPHOUS INSULATOR FILM AND THIN-FILM TRANSISTOR
First Claim
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1. An amorphous insulator film which is used as a gate-insulator film of a thin-film transistor and comprises silicon oxide, whereinthe amorphous insulator film includes Ar;
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Abstract
An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.
20 Citations
9 Claims
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1. An amorphous insulator film which is used as a gate-insulator film of a thin-film transistor and comprises silicon oxide, wherein
the amorphous insulator film includes Ar; - and
Ar is included therein in an amount of equal to or larger than 3 at. % in terms of atomic ratio with respect to Si. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification