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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100051949A1
  • Filed: 08/20/2009
  • Published: 03/04/2010
  • Est. Priority Date: 09/01/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode over an insulating surface;

    a gate insulating layer over the gate electrode;

    a semiconductor layer over the gate insulating layer; and

    a source region and a drain region over the semiconductor layer,wherein the semiconductor layer is an oxide semiconductor layer, andwherein the source region and the drain region are oxide semiconductor layers, have a lower oxygen concentration than the semiconductor layer and include a crystal grain with a size of 1 nm to 10 nm.

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