Absorbing film

• US 20100051967A1
• Filed: 02/14/2007
• Published: 03/04/2010
• Est. Priority Date: 02/14/2006
• Status: Active Grant

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Tischler, Jonathan R., Bulovic, Vladimir, Bradley, Michael Scott
• Granted Patent: US 8,809,876 B2
• Time in Patent Office: Days
• US Class Current: 257/80
• CPC Class Codes: G02B 5/288 comprising at least one thin film resonant cavity, e.g. in bandpass filters

Abstract

Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye.

Claims

1. A method of forming a light absorbing film comprising:

forming a non-covalent multilayer including a light-absorbing material on a surface of a first substrate;

contacting the surface of the first substrate with a surface of a second substrate, and thereby transferring at least a portion of the light absorbing material from the surface of the first substrate to the surface of the second substrate.

2. The method of claim 1, wherein the non-covalent multilayer includes a first layer interacting with a second layer via electrostatic interactions.

3. The method of claim 1, wherein the non-covalent multilayer includes a first layer interacting with a second layer via hydrogen-bonding interactions.

4. The method of claim 1, wherein forming the non-covalent multilayer includes contacting the substrate with the light-absorbing material.

5. The method of claim 4, wherein forming the non-covalent multilayer includes contacting the substrate with a multiply charged species.

6. The method of claim 5, wherein the multiply charged species is a polyelectrolyte.

7. The method of claim 6, wherein the polyelectrolyte is a polycation.

8. The method of claim 6, wherein the polyelectrolyte is a polyanion.

9. The method of claim 1, wherein forming the non-covalent multilayer includes depositing at least one layer of a polycation and at least one layer of a polyanion.

10. The method of claim 1, wherein forming the non-covalent multilayer includes depositing at least one layer of a polycation and at least one layer of the light-absorbing material.

11. The method of claim 1, further comprising chemically modifying the surface of the first substrate prior to forming the non-covalent multilayer.

12. The method of claim 1, wherein the surface of the first substrate includes a pattern including an elevation or a depression.

13. The method of claim 12, wherein a feature of the pattern has a dimension of less than 1 millimeter.

14. The method of claim 12, wherein a feature of the pattern has a dimension of less than 100 micrometers.

15. The method of claim 12, wherein a feature of the pattern has a dimension of less than 1 micrometer.

16. The method of claim 1, wherein the light-absorbing material includes a J-aggregate.

17. The method of claim 16, wherein the light-absorbing material includes a cyanine dye.

18. The method of claim 1, wherein the electrostatic multilayer has an absorption coefficient of at least 1×

10⁵ cm<sup>−

1</sup>.

19. The method of claim 1, wherein the electrostatic multilayer has an absorption coefficient of at least 5×

10⁵ cm<sup>−

1</sup>.

20. The method of claim 1, wherein the electrostatic multilayer has an absorption coefficient of at least 1×

10⁶ cm<sup>−

1</sup>.

21. The method of claim 1, wherein the second substrate includes a first electrode.

22. The method of claim 21, wherein the second substrate includes a charge transporting material.

23. The method of claim 22, further comprising applying a second electrode over the first electrode, the charge transporting material and the transferred portion of the light absorbing material, thereby forming a light emitting device.

33. The device of claim 22, wherein the non-covalent multilayer has an absorption coefficient of at least 5×

10⁵ cm<sup>−

1</sup>.

34. The device of claim 22, wherein the non-covalent multilayer has an absorption coefficient of at least 1×

10⁶ cm<sup>−

1</sup>.

35. The device of claim 1, wherein the non-covalent multilayer is crosslinked.

24. An optical device comprising a substrate and an non-covalent multilayer including a light-absorbing material on predetermined region of a surface of the substrate.

25. The device of claim 24, wherein the predetermined region includes a feature having a dimension of less than 1 millimeter.

26. The device of claim 24, wherein the predetermined region includes a feature having a dimension of less than 100 micrometers.

27. The device of claim 24, wherein the predetermined region includes a feature having a dimension of less than 1 micrometer.

28. The device of claim 24, wherein the light-absorbing material includes a J-aggregate.

29. The device of claim 28, wherein the J-aggregate includes a cyanine dye.

30. The device of claim 24, wherein the non-covalent multilayer includes a multiply charged species.

31. The device of claim 30, wherein the multiply charged species is a polyelectrolyte.

32. The device of claim 24, wherein the non-covalent multilayer has an absorption coefficient of at least 1×

10⁵ cm<sup>−

1</sup>.

36. A light emitting device comprising:

a first electrode;

a second electrode opposed to the first electrode; and

a predefined region including a non-covalent multilayer including a light-absorbing material disposed between the first electrode and the second electrode.

37. The light emitting device of claim 36, wherein the predetermined region includes a feature having a dimension of less than 1 millimeter.

38. The light emitting device of claim 36, wherein the predetermined region includes a feature having a dimension of less than 100 micrometers.

39. The light emitting device of claim 38, wherein the predetermined region includes a feature having a dimension of less than 1 micrometer.

40. The light emitting device of claim 36, wherein the light-absorbing material includes a J-aggregate.

41. The light emitting device of claim 40, wherein the J-aggregate includes a cyanine dye.

42. The light emitting device of claim 36, wherein the non-covalent multilayer includes a multiply charged species.

43. The light emitting device of claim 42, wherein the multiply charged species is a polyelectrolyte.

44. The light emitting device of claim 36, wherein the non-covalent multilayer has an absorption coefficient of at least 1×

10⁵ cm<sup>−

1</sup>.

45. The light emitting device of claim 36, wherein the non-covalent multilayer has an absorption coefficient of at least 5×

10⁵ cm<sup>−

1</sup>.

46. The light emitting device of claim 36, wherein the non-covalent multilayer has an absorption coefficient of at least 1×

10⁶ cm<sup>−

1</sup>.

47. An optical device comprising a substrate and a non-covalent multilayer including a light-absorbing material on predetermined region of a surface of the substrate, wherein the non-covalent multilayer is adjacent to a light transmissive material having a substantially different index of refraction from an index of refraction of the non-covalent multilayer.

48. The device of claim 47, wherein the optical device is reflective at a wavelength where the non-covalent multilayer has an absorption coefficient of at least 1×

10⁵ cm<sup>−

1</sup>.

49. The device of claim 47, wherein the predetermined region corresponds to an image, letter, number, bar code, or combination thereof.

50. An optical device comprising a plurality of dielectric layers and a non-covalent multilayer between at least two of the dielectric layers, the non-covalent multilayer including a light-absorbing material on predetermined region of a surface of the substrate, wherein the non-covalent multilayer is adjacent to a light transmissive material having a substantially different index of refraction from an index of refraction of the non-covalent multilayer,

51. The device of claim 50, further comprising a plurality of a non-covalent multilayers between at least two dielectric layers.

52. The device of claim 50, wherein the plurality of dielectric layers includes silica layers and titania layers.