SEMICONDUCTOR DEVICE WITH A TRENCH GATE STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF

• US 20100052044A1
• Filed: 09/04/2008
• Published: 03/04/2010
• Est. Priority Date: 09/04/2008
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz
• Granted Patent: US 8,022,470 B2
• Time in Patent Office: Days
• US Class Current: 257/328
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A semiconductor device with a trench gate structure includes a semiconductor body with switching electrodes. At least gate electrode controls the off state and the on state between the switching electrodes. The at least one gate electrode in the trench gate structure controls at least one vertical switching channel through at least one body zone. The trench gate structure includes at least one trench with side walls, wherein the at least one gate electrode, which is insulated against the side walls in the region of the at least one body zone alternately by at least one gate oxide section and at least one trench oxide section and forms a switching channel with a gate oxide section in the at least one region, is located in the at least one trench.

Claims

1. A semiconductor device comprising:

a semiconductor body with two switching electrodes;

at least one gate electrode, wherein the at least one gate electrode controls the off state and the on state between the switching electrodes;

a trench gate structure by which the at least one gate electrode controls at least one vertical switching channel through at least one body zone; and

wherein the trench gate structure includes at least one trench with side walls and wherein the at least one trench accommodates the at least one gate electrode, which is insulated in the region of the at least one body zone against the side walls alternately by at least one gate oxide section and at least one trench oxide section, and which forms a switching channel with a gate oxide section in the at least one region.

2. The semiconductor device of claim 1, wherein the switching channel is formed only in the at least one region with a gate oxide section.

3. The semiconductor device of claim 1, wherein the at least one trench oxide section is located in a section of the trench gate structure where the at least one gate electrode is reduced in its width.

4. The semiconductor device of claim 1, wherein the at least one trench oxide section is located in a section of the trench gate structure where the at least one gate electrode is interrupted.

5. The semiconductor device of claim 1, wherein a field plate is provided in the at least one trench oxide section.

6. The semiconductor device of claim 5, wherein the field plate is electrically connected to one of the switching electrodes.

7. The semiconductor device of claim 5, wherein the field plate is floatingly coupled to the surrounding semiconductor body.

8. The semiconductor device of claim 1, wherein the at least one gate electrode is located between two trench walls and the gate electrode sections are alternately located towards a left-hand trench wall and a right-hand trench wall.

9. The semiconductor device of claim 1, wherein the semiconductor device has a trench structure with a central vertical field plate in the centre of the at least one trench and gate electrode sections are arranged in the at least one trench to the left and to the right of the central field plate.

10. The semiconductor device of claim 1, wherein a first field plate is provided in the at least one trench oxide section, and wherein a second field plate extending in the direction of a vertical end of a drift zone and electrically connected to the first field plate is provided below the gate electrode.

11. The semiconductor device of claim 1, wherein the at least one vertical switching channel is provided between a near-surface zone of a first conduction type and a drift zone of the same conduction type in the semiconductor body, and wherein the at least one body zone has a conduction type complementing the first conduction type.

12. A semiconductor device comprising:

a semiconductor body with switching electrodes;

a gate electrode, wherein the at least one gate electrode controls the off state and the on state between the switching electrodes;

a trench gate structure by which the at least one gate electrode controls at least one vertical switching channel through at least one body zone; and

wherein the trench gate structure includes at least one trench with side walls and wherein the at least one trench accommodates the at least one gate electrode, which is insulated in the region of the at least one body zone against the side walls alternately by at least one gate oxide section and at least one trench oxide section, and which forms a switching channel with a gate oxide section in the at least one region.

wherein the trench gate structure includes strip-shaped parallel trenches.

13. The semiconductor device of claim 12, wherein the gate oxide sections are offset relative to one another in adjacent trenches of the trench gate structure, so that a gate oxide section of one trench is disposed opposite a trench oxide section of an adjacent trench.

14. The semiconductor device of claim 12, wherein there is the following relationship between the length l_gt of a gate oxide section and an adjacent trench oxide section and the distance d between two adjacent trenches:

l_gt≦

2·

d.

15. The semiconductor device of claim 12, wherein there is the following relationship between the length l_gt of a gate oxide section and an adjacent trench oxide section and the distance d between two adjacent trenches:

l_gt=d.

16. A method for the production of a semiconductor device with a trench gate structure, comprising:

following completing a trench structure with trench walls and trench bases, applying a first insulating layer thicker than a gate dielectric to the trench walls and trench bases;

etching sections of the trench walls and trench bases and applying a gate dielectric to the exposed sections;

filling the trench structure with a gate electrode, sections of which are modulated in their width by the varying insulation thickness;

completing the semiconductor device with first and second switching electrodes and a trench gate structure.

17. A semiconductor device comprising:

a semiconductor body with switching electrodes;

a gate electrode, wherein the gate electrode controls the off state and the on state between the switching electrodes;

a trench gate structure by which the gate electrode controls a vertical switching channel through a body zone; and

wherein the trench gate structure includes a trench with side walls and wherein the trench accommodates the gate electrode, insulated in the region of the body zone against the side walls alternately by a gate oxide section and a trench oxide section, and which forms a switching channel with a gate oxide section in the at least one region.

18. The semiconductor device of claim 17, wherein a field plate extending into the semiconductor body in the direction of a vertical end of a drift zone is provided below the gate electrode.

19. The semiconductor device of claim 18, wherein the field plate is electrically connected to the at least one gate electrode.

20. The semiconductor device of claim 17, wherein there is the following relationship between the width w of the switching channel and the length l_gt of a gate oxide section and an adjacent trench oxide section:

w≦

0.5·

l_gt.

21. The semiconductor device of claim 17, wherein there is the following relationship between the width w of the switching channel and the length l_gt of a gate oxide section and an adjacent trench oxide section:

w≦

0.1·

l_gt.