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SEMICONDUCTOR STRUCTURES FORMED ON SUBSTRATES AND METHODS OF MANUFACTURING THE SAME

  • US 20100052046A1
  • Filed: 11/09/2009
  • Published: 03/04/2010
  • Est. Priority Date: 07/25/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor apparatus, comprising:

  • a metal substrate;

    a doped silicon layer on the metal substrate;

    a semiconductor layer overlying the doped silicon layer; and

    semiconductor structures having one or more p-n junctions at least partially within the semiconductor layer formed by using layering, patterning, and doping steps.

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