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DOWNSIZE POLYSILICON HEIGHT FOR POLYSILICON RESISTOR INTEGRATION OF REPLACEMENT GATE PROCESS

  • US 20100052058A1
  • Filed: 03/11/2009
  • Published: 03/04/2010
  • Est. Priority Date: 08/29/2008
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • providing a semiconductor substrate;

    forming at least one gate structure including a dummy gate over the semiconductor substrate;

    forming at least one resistive structure including a gate over the semiconductor substrate;

    exposing a portion of the gate of the at least one resistive structure;

    forming an etch stop layer over the semiconductor substrate, including over the exposed portion of the gate;

    removing the dummy gate from the at least one gate structure to create an opening; and

    forming a metal gate in the opening of the at least one gate structure.

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