FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM
First Claim
1. A film deposition apparatus for depositing a thin film on a substrate in a vacuum chamber by sequentially supplying at least two kinds of source gases, including a first reaction gas and a second reaction gas, and by carrying out a supply cycle to sequentially supply said at least two kinds of source gases, said film deposition apparatus comprising:
- a turntable rotatably provided in the chamber and having a substrate receiving part configured to receive a substrate;
a protection top plate, disposed above the turntable to oppose the turntable, configured to protect the vacuum chamber from corrosion with respect to the first reaction gas and the second reaction gas;
a first reaction gas supply part and a second reaction gas supply part, extending from mutually different positions along a circumferential edge of the turntable towards a rotation center of the turntable, configured to supply the first reaction gas and the second reaction gas, respectively;
a first separation gas supply part extending from a position along the circumferential edge of the turntable between the first reaction gas supply part and the second reaction gas supply part towards the rotation center of the turntable, configured to supply a first separation gas for separating the first reaction gas and the second reaction gas from each other;
a first lower surface portion located at a first distance from an upper surface of the turntable, and included in a lower surface of the protection top plate which includes the first reaction gas supply part;
a first space formed between the first lower surface portion and the turntable;
a second lower surface portion located at a second distance from the upper surface of the turntable at a position separated from the first lower surface portion, and included in the lower surface of the protection top plate which includes the second reaction gas supply part;
a second space formed between the second lower surface portion and the turntable;
a third lower surface portion located at a third distance from the upper surface of the turntable, and included in the lower surface of the protection top plate which includes the first separation gas supply part and is located on both sides of the first separation gas supply part along a rotating direction of the turntable, said third height being lower than each of the first height and the second height;
a third space formed between the third lower surface portion and the turntable, and having the third height to flow the first separation gas from the first separation gas supply part to the first space and the second space;
a vacuum chamber protection part configured to surround the turntable, the first space, the second space and the third space, together with the protection top plate, and to protect the vacuum chamber from corrosion with respect to the first reaction gas and the second reaction gas;
a second separation gas supply part, provided in a central part area included in the lower surface of the protection top plate on a side of the substrate receiving part relative to the rotation center of the turntable, and configured to supply a second separation gas for separating the first reaction gas and the second reaction gas from each other; and
an exhaust port configured to exhaust the first reaction gas and the second reaction gas together with the first separation gas ejected to both sides of the third space and the second separation gas ejected from the central part area.
1 Assignment
0 Petitions
Accused Products
Abstract
A film deposition apparatus to form a thin film by supplying first and second reaction gases within a vacuum chamber includes a turntable, a protection top plate, first and second reaction gas supply parts extending from a circumferential edge towards a rotation center of the turntable, and a separation gas supply part provided therebetween. First and second spaces respectively include the first and second reaction gas supply parts and have heights H1 and H2. A third space includes the separation gas supply part and has a height H3 lower than H1 and H2. The film deposition apparatus further includes a vacuum chamber protection part which surrounds the turntable and the first, second and third spaces together with the protection top plate to protect the vacuum chamber from corrosion.
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Citations
20 Claims
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1. A film deposition apparatus for depositing a thin film on a substrate in a vacuum chamber by sequentially supplying at least two kinds of source gases, including a first reaction gas and a second reaction gas, and by carrying out a supply cycle to sequentially supply said at least two kinds of source gases, said film deposition apparatus comprising:
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a turntable rotatably provided in the chamber and having a substrate receiving part configured to receive a substrate; a protection top plate, disposed above the turntable to oppose the turntable, configured to protect the vacuum chamber from corrosion with respect to the first reaction gas and the second reaction gas; a first reaction gas supply part and a second reaction gas supply part, extending from mutually different positions along a circumferential edge of the turntable towards a rotation center of the turntable, configured to supply the first reaction gas and the second reaction gas, respectively; a first separation gas supply part extending from a position along the circumferential edge of the turntable between the first reaction gas supply part and the second reaction gas supply part towards the rotation center of the turntable, configured to supply a first separation gas for separating the first reaction gas and the second reaction gas from each other; a first lower surface portion located at a first distance from an upper surface of the turntable, and included in a lower surface of the protection top plate which includes the first reaction gas supply part; a first space formed between the first lower surface portion and the turntable; a second lower surface portion located at a second distance from the upper surface of the turntable at a position separated from the first lower surface portion, and included in the lower surface of the protection top plate which includes the second reaction gas supply part; a second space formed between the second lower surface portion and the turntable; a third lower surface portion located at a third distance from the upper surface of the turntable, and included in the lower surface of the protection top plate which includes the first separation gas supply part and is located on both sides of the first separation gas supply part along a rotating direction of the turntable, said third height being lower than each of the first height and the second height; a third space formed between the third lower surface portion and the turntable, and having the third height to flow the first separation gas from the first separation gas supply part to the first space and the second space; a vacuum chamber protection part configured to surround the turntable, the first space, the second space and the third space, together with the protection top plate, and to protect the vacuum chamber from corrosion with respect to the first reaction gas and the second reaction gas; a second separation gas supply part, provided in a central part area included in the lower surface of the protection top plate on a side of the substrate receiving part relative to the rotation center of the turntable, and configured to supply a second separation gas for separating the first reaction gas and the second reaction gas from each other; and an exhaust port configured to exhaust the first reaction gas and the second reaction gas together with the first separation gas ejected to both sides of the third space and the second separation gas ejected from the central part area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A film deposition method for depositing a thin film on a substrate in a space surrounded by a vacuum chamber protection part which protects a vacuum chamber from corrosion by sequentially supplying at least two kinds of source gases, including a first reaction gas and a second reaction gas, and by carrying out a supply cycle to sequentially supply said at least two kinds of source gases, said film deposition method comprising:
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placing a substrate on a turntable within the vacuum chamber; rotating the turntable; supplying, from a first reaction gas supply part, a first reaction gas to a first space formed between an upper surface of the turntable and a top plate of the vacuum chamber protection part; supplying, from a second reaction gas supply part disposed at a position different from a position of the first reaction gas supply part along a rotating direction of the turntable, a second reaction gas to a second space formed between the upper surface of the turntable and the top plate of the vacuum chamber protection part; supplying, from a first separation gas supply part disposed between the first reaction gas supply part and the second reaction gas supply part, a first separation gas to a third space formed between the upper surface of the turntable and the top plate of the vacuum chamber protection part, said third space being lower than the first space and the second space; supplying a second separation gas for separating the first reaction gas and the second reaction gas to a central part area under the top plate and above the turntable; and moving the substrate with a rotation of the turntable, to repeat supplying the first reaction gas to the surface of the substrate, stop supplying the first reaction gas, supplying the second reaction gas to the surface of the substrate, and stop supplying the second reaction gas, in order to exhaust the first reaction gas and the second reaction gas together with the first separation gas and the second separation gas, to thereby form a thin film on the substrate. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A computer-readable storage medium which stores a program which, when executed by a computer, causes the computer to perform a film deposition process for depositing a thin film on a substrate in a space surrounded by a vacuum chamber protection part which protects a vacuum chamber from corrosion by sequentially supplying at least two kinds of source gases, including a first reaction gas and a second reaction gas, and by carrying out a supply cycle to sequentially supply said at least two kinds of source gases, said program comprising:
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a procedure causing the computer to rotate a turntable having a substrate placed thereon; a procedure causing the computer to supply, from a first reaction gas supply part, a first reaction gas to a first space formed between an upper surface of the turntable and a top plate of the vacuum chamber protection part; a procedure causing the computer to supply, from a second reaction gas supply part disposed at a position different from a position of the first reaction gas supply part along a rotating direction of the turntable, a second reaction gas to a second space formed between the upper surface of the turntable and the top plate of the vacuum chamber protection part; a procedure causing the computer to supply, from a first separation gas supply part disposed between the first reaction gas supply part and the second reaction gas supply part, a first separation gas to a third space formed between the upper surface of the turntable and the top plate of the vacuum chamber protection part, said third space being lower than the first space and the second space; a procedure causing the computer to supply, a second separation gas for separating the first reaction gas and the second reaction gas to a central part area under the top plate and above the turntable; and a procedure causing the computer to move the substrate with a rotation of the turntable, and repeat supplying the first reaction gas to the surface of the substrate, stop supplying the first reaction gas, supplying the second reaction gas to the surface of the substrate, and stop supplying the second reaction gas, in order to exhaust the first reaction gas and the second reaction gas together with the first separation gas and the second separation gas, to thereby form a thin film on the substrate.
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Specification