MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD)
First Claim
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1. A method for forming an elemental film on a substrate in a chamber comprising:
- introducing a reactant gas into the chamber, the reactant gas forming an adsorbed layer of the reactant gas on the substrate;
introducing at least one ion generating feed gas into the chamber;
generating a plasma from the ion generating feed gas to form ions;
exposing the substrate to the ions;
modulating the ions; and
reacting the adsorbed reactant gas with the ions to form the elemental film.
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Abstract
The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique.
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Citations
21 Claims
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1. A method for forming an elemental film on a substrate in a chamber comprising:
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introducing a reactant gas into the chamber, the reactant gas forming an adsorbed layer of the reactant gas on the substrate; introducing at least one ion generating feed gas into the chamber; generating a plasma from the ion generating feed gas to form ions; exposing the substrate to the ions; modulating the ions; and reacting the adsorbed reactant gas with the ions to form the elemental film. - View Dependent Claims (9)
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2. A method for depositing an elemental film onto a substrate in a chamber comprising:
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introducing a reactant gas into the chamber, the reactant gas forming an adsorbed layer of the reactant gas on the substrate; removing any excess reactant gas from the chamber; introducing at least one ion generating feed gas into the chamber; generating a plasma from the ion generating feed gas to form ions; exposing the substrate to the ions; modulating the ions; and reacting the adsorbed reactant gas with the ions to form the elemental film. - View Dependent Claims (3, 4, 5, 6, 7, 8, 10, 11)
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12. A method for depositing an elemental film onto a substrate in a chamber comprising:
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introducing a reactant gas into the chamber, the reactant gas forming an adsorbed layer of the reactant gas on the substrate; removing any excess reactant gas from the chamber; introducing at least one ion generating feed gas into the chamber; introducing at least one radical generating feed gas into the chamber; generating a plasma from the ion generating feed gas and the radical generating feed gas to form ions and radicals; exposing the substrate to the ions and radicals; modulating the ions; and reacting the adsorbed reactant gas with the ions and radicals to form the elemental film wherein the radicals are not incorporated into the film. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for forming an elemental film on a substrate comprising:
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introducing a reactant gas into a chamber, the reactant gas forming an adsorbed layer of the reactant gas on the substrate; introducing at least one ion generating feed gas into the chamber; generating a plasma from the ion generating feed gas to form ions; exposing the substrate to the ions; modulating the ions; and reacting the adsorbed reactant gas with the ions to form the elemental film on the substrate without first having formed an intermediate film on the substrate.
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Specification