ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD

• US 20100055347A1
• Filed: 08/26/2009
• Published: 03/04/2010
• Est. Priority Date: 08/29/2008
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ushikubo, Shigehiro, KATO, HITOSHI, Kikuchi, Hiroyuki, Takeuchi, Yasushi
• Granted Patent: US 9,053,909 B2
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45517 Confinement of gases to vicinity of substrate
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C23C 16/5093 Coaxial electrodes
• CPC Class Codes: H01J 1/00 Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps details of electron-optical arrangements or of ion traps H01J3/00
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings

Abstract

An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

Claims

1. An activated gas injector comprising:

a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall;

a gas introduction port through which a process gas is introduced into the gas introduction passage;

a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage;

through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and

gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

2. The activated gas injector of claim 1, wherein each of the electrodes is covered by ceramics when the activating unit includes the pair of the electrodes.

3. The activated gas injector of claim 1, further comprising a gas introduction nozzle provided in the gas introduction passage along the partition wall and having gas holes along a longitudinal direction of the gas introduction nozzle, wherein the gas introduction nozzle is connected at a base end thereof to the gas introduction port.

5. A film deposition apparatus comprising:

a turntable provided in a vacuum chamber, wherein the turntable includes a substrate receiving area in which a substrate is placed; and

an activated gas injector of claim 1, wherein the activated gas injector is arranged in a direction intersecting a direction along which the substrate receiving area moves due to rotation of the turntable and opposes the substrate receiving area of the turntable, and supplies an activated reaction gas to the substrate in order to deposit a film on the substrate.

6. A film deposition apparatus comprising:

a turntable provided in a vacuum chamber, wherein the turntable includes a substrate receiving area in which a substrate is placed; and

the activated gas injector of claim 1, wherein the activated gas injector is arranged in a direction intersecting a direction along which the substrate receiving area moves due to rotation of the turntable and opposes the substrate receiving area of the turntable, thereby supplying an activated gas to modify a property of a film on the substrate.

7. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition apparatus comprising:

a turntable provided in the vacuum chamber, wherein the turntable includes a substrate receiving area in which a substrate is placed;

a first reaction gas supplying portion configured to supply a first reaction gas to a surface with the substrate receiving area;

a second reaction gas supplying portion including the activated gas injector of claim 1 configured to supply a second reaction gas to the surface with the substrate receiving area, the second reaction gas supplying portion being separated from the first reaction gas supplying portion along a rotation direction of the turntable;

a separation area located between a first process area in which the first reaction gas is supplied and a second process area in which the second reaction gas is supplied, along the rotation direction; and

an evacuation opening provided in the chamber in order to evacuate the chamber;

wherein the separation area includes a separation gas supplying portion that supplies a separation gas, and a ceiling surface that creates in relation to the surface with the substrate receiving area a thin space in which the separation gas may flow from the separation area to the process area side in relation to the rotation direction.

8. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition apparatus comprising:

a turntable provided in the vacuum chamber, wherein the turntable includes a substrate receiving area in which a substrate is placed;

a first reaction gas supplying portion configured to supply a first reaction gas to a surface with the substrate receiving area;

a second reaction gas supplying portion configured to supply a second reaction gas to the surface with the substrate receiving area, the second reaction gas supplying portion being separated from the first reaction gas supplying portion along a rotation direction of the turntable;

the activated gas injector of claim 1, wherein the activated gas injector is arranged between the first reaction gas supplying portion and the second reaction gas supplying portion along the rotation direction and opposes the surface with the substrate receiving area, thereby supplying an activated process gas in order to modify a property of the reaction product on the substrate;

a separation area located between a first process area in which the first reaction gas is supplied and a second process area in which the second reaction gas is supplied, along the rotation direction; and

an evacuation opening provided in the chamber in order to evacuate the chamber;

wherein the separation area includes a separation gas supplying portion that supplies a separation gas, and a ceiling surface that creates in relation to the surface with the substrate receiving area a thin space in which the separation gas may flow from the separation area to the process area side in relation to the rotation direction.

9. The film deposition apparatus of claim 5, wherein the gas ejection holes of the activated gas injector are arranged 1 mm or more and 10 mm or less above the turntable.

10. The film deposition apparatus of claim 6, wherein an outer surface of the activated gas injector is configured as a cover member that covers the gas activation passage and the gas introduction passage, and wherein the lower end portion of the cover member is configured as an airflow control member that extends outward in parallel with the turntable, leaving a gap therebetween, in order to impede gas from entering an inside of the cover member.

11. The film deposition apparatus of claim 6, wherein the activated gas injector is hermetically attached to a side wall of the vacuum chamber so that a distance between the activated gas injector and a surface of the substrate placed on the turntable is adjustable.

12. The film deposition apparatus of claim 6, wherein the activated gas injector is hermetically attached to a side wall of the vacuum chamber so that the activated gas injector is adjustably inclined with respect to a surface of the substrate placed on the turntable.

17. A film deposition method for depositing a film on a substrate by carrying out a cycle of supplying in turn at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition method comprising steps of:

placing a substrate in a substrate receiving area of a turntable provided in the vacuum chamber and rotating the turntable around a vertical axis;

evacuating the vacuum chamber;

supplying a first reaction gas to a surface of the substrate from a first reaction gas supplying portion;

supplying a second reaction gas to the surface of the substrate from a second reaction gas supplying portion located downstream relative to the turntable with respect to the first reaction gas supplying portion, thereby producing the reaction product on the substrate through chemical reaction of the first reaction gas and the second reaction gas;

supplying an activated process gas from the activated gas injector of claim 1 to modify a property of the reaction product, wherein the activated gas injector is arranged between the second reaction gas supplying portion and the first reaction gas supplying portion along the rotation direction of the turntable and opposing the substrate receiving area of the turntable; and

supplying a separation gas to a separation area arranged between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area being provided to separate atmospheres of the first and the second process areas.

18. A film deposition method for depositing a film on a substrate by carrying out a cycle of supplying in turn at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition method comprising steps of:

placing a substrate in a substrate receiving area of a turntable provided in the vacuum chamber and rotating the turntable around a vertical axis;

evacuating the vacuum chamber;

supplying a first reaction gas to a surface of the substrate from a first reaction gas supplying portion;

supplying a second reaction gas to the surface of the substrate from a second reaction gas supplying portion located downstream relative to the turntable with respect to the first reaction gas supplying portion, thereby producing the reaction product on the substrate through chemical reaction of the first reaction gas and the second reaction gas;

supplying a process gas activated into plasma from the activated gas injector of claim 1 to modify a property of the reaction product, wherein the activated gas injector is arranged between the second reaction gas supplying portion and the first reaction gas supplying portion along the rotation direction of the turntable and opposing the substrate receiving area of the turntable; and

supplying a separation gas to a separation area arranged between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area being provided to separate atmospheres of the first and the second process areas.

19. The film deposition method of claim 17, wherein the step of supplying an activated process gas is carried out for every revolution of the turntable.

4. An activated gas injector comprising:

a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall;

a gas introduction port through which a process gas is introduced into the gas introduction passage;

a heater configured to heat and activate the process gas, wherein the heater extends along the partition wall in the gas activation passage;

through-holes formed in the partition wall and along a longitudinal direction of the heater, wherein the through-holes allow the process gas introduced into the gas introduction passage to flow into the gas activation passage; and

gas ejection holes provided in the gas activation passage along the longitudinal direction of the heater, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

13. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition apparatus comprising:

a table provided in the vacuum chamber, wherein a substrate is placed on the table;

a first reaction gas supplying portion configured to supply a first reaction gas to the substrate on the table;

a second reaction gas supplying portion configured to supply a second reaction gas to the substrate on the table;

an activation portion configured to activate a process gas in order to modify a property of the reaction product on the substrate; and

a rotation mechanism configured to rotate the first reaction gas supplying portion, the second reaction gas supplying portion, and the activation portion in relation to the table,

wherein the substrate may be located in a first area where the first reaction gas is supplied, a second area where the second gas is supplied, and a third area where the activated process gas is supplied in this order by the relative rotation.

14. The film deposition apparatus of claim 13, further comprising:

a separation area located between the first area and the second area along a direction of the relative rotation in order to separate atmospheres of the first area and the second area; and

an evacuation opening through which a separation gas spreading in both sides of the separation area, the first reaction gas and the second reaction gas are evacuated,

wherein the separation area includes a separation gas supplying portion configured to supply the separation gas, and a ceiling surface located on both sides of the separation gas supplying portion along the direction of the relative rotation, the ceiling surface creating a thin space in which the separation gas may flow from the separation area toward the first area and/or the second area.

15. The film deposition apparatus of claim 13, wherein the activation portion includes an activated gas injector that extends in a direction from an inner circumferential portion to an outer circumferential portion of the table and has gas ejection holes arranged along the direction from the inner circumferential portion to the outer circumferential portion of the table.

16. The film deposition apparatus of claim 13, wherein the activation portion comprises:

a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall;

a gas introduction port through which a process gas is introduced into the gas introduction passage;

a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage;

through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and

gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

20. A film deposition method for depositing a film on a substrate by carrying out a cycle of supplying in turn at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a vacuum chamber, the film deposition method comprising steps of:

substantially horizontally placing the substrate on a table in the vacuum chamber;

supplying a first reaction gas to the substrate on the table from a first reaction gas supplying portion;

rotating the table and the first reaction gas supplying portion relative to each other, thereby locating the substrate in a second reaction gas supplying area, and supplying a second reaction gas to the substrate from a second reaction gas supplying portion;

rotating the first reaction gas supplying portion and the second reaction gas supplying portion in relation to the table, thereby locating the substrate in an activation area, and supplying an activated process gas to the substrate from an activation portion, thereby modifying a property of the reaction product on the substrate; and

supplying a separation gas to a separation area arranged between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area being provided to separate atmospheres of the first and the second process areas.