PLASMA ASHING APPARATUS AND ENDPOINT DETECTION PROCESS

• US 20100055807A1
• Filed: 09/02/2009
• Published: 03/04/2010
• Est. Priority Date: 05/22/2003
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Axcelis Technologies Incorporated
• Inventors: Srivastava, Aseem Kumar, Buckley, Thomas James, Sakthivel, Palanikumaran
• Granted Patent: US 8,268,181 B2
• Time in Patent Office: Days
• US Class Current: 438/9
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.

Claims

1. A method for detecting an endpoint for an oxygen free and nitrogen free plasma ashing process, comprising:

exposing a substrate comprising photoresist material and/or post etch residues thereon to the oxygen free and nitrogen free plasma in a process chamber;

removing the photoresist material and/or post etch residues from the substrate;

exhausting the removed photoresist material and/or post etch residues from the process chamber into an exhaust conduit fluidly coupled to the process chamber;

selectively introducing an oxidizing gas into the exhaust conduit;

generating a plasma from the oxidizing gas and the exhausted photoresist material and/or post etch residues to form emissive species; and

optically monitoring an emission signal produced by the emissive species to determine the endpoint of the oxygen free and nitrogen free plasma ashing process.

2. The method of claim 1, wherein the emission signal produced by the emissive species is monitored at one or more wavelengths of about 283 nm, about 309 nm, about 387 nm, about 431 nm, about 434 nm, about 468 nm, about 472 nm, about 513 nm, about 516 nm, about 656 nm, about 668 nm, about 777 nm, and/or of about 845 nm.

3. The method of claim 1, wherein exposing the substrate to the oxygen free and nitrogen free plasma in the process chamber and generating the oxygen plasma in the exhaust conduit occurs simultaneously.

4. The method of claim 1, wherein the substrate comprises a carbon and/or hydrogen containing insulating layer having a dielectric constant less than about 3.5.

5. The method of claim 1, wherein the an oxygen free and nitrogen free plasma ashing process comprises generating the oxygen free and nitrogen free plasma from a gas mixture comprising hydrogen or helium or a combination comprising at least one of the foregoing gases.

6. The method of claim 1, further comprising preventing backstreaming of the oxidizing gas into the process chamber.

8. The endpoint detection process of claim 6, wherein the emission signal intensity is at a wavelength selected from the group consisting of about 283 nm, about 309 nm, about 387 nm, about 431 nm, about 434 nm, about 468 nm, about 472 nm, about 513 nm, about 516 nm, about 656 nm, about 668 nm, about 777 nm, about 845 nm, and a combination of at least one of the foregoing wavelengths.

9. The endpoint detection process of claim 6, wherein the substrate comprises a carbon and/or hydrogen containing insulating layer having a dielectric constant less than about 3.5.

10. The endpoint detection process of claim 6, wherein the oxidizing gas comprises oxygen.

11. The endpoint detection process of claim 6, wherein optically monitoring the emissive species comprises focusing collection optics of an optical detector at or about a plasma discharge region for the plasma from the oxidizing gas and the plasma ashing discharge.

7. An endpoint detection process for an oxygen free and nitrogen free plasma ashing process for removing photoresist and/or residues from a substrate, comprising:

introducing an oxidizing gas and a plasma ashing discharge into an exhaust conduit of a plasma asher apparatus, wherein the plasma ashing discharge comprises photoresist material, post etch residues, and post ashing products, and wherein the plasma ashing discharge is free from nitrogen and oxygen species;

generating a plasma from the oxidizing gas and the plasma ashing discharge to form emissive species; and

optically monitoring emission signal intensities correlating to the emissive species, wherein an endpoint of the oxygen free and nitrogen free plasma ashing process is detected when the emission signal intensities correlating to the emissive species substantially change to an amount greater or less than a predetermined threshold.

12. A method for determining an endpoint of an oxygen free and nitrogen free plasma ashing process used for stripping photoresist material from a substrate having a carbon-containing low k dielectric material, comprising:

exposing the substrate to the oxygen free and nitrogen free plasma ashing process in a process chamber to remove the photoresist material from the substrate and form volatile byproducts;

exhausting the photoresist material and volatile byproducts from the process chamber into an exhaust conduit;

selectively introducing an oxidizing gas into the exhaust conduit, wherein the oxidizing gas does not flow into the process chamber;

generating a plasma in the exhaust conduit from the oxidizing gas, the exhausted photoresist material, and the volatile byproducts;

measuring an emission signal intensity in the exhaust conduit correlating to a wavelength selected from the group consisting of about 283 nm, 309 nm, about 387 nm, about 431 nm, about 434 nm, about 468 nm, about 472 nm, about 513 nm, about 516 nm, about 656 nm, about 668 nm, about 777 nm, about 845 nm, and a combination of at least one of the foregoing wavelengths; and

determining the endpoint of the oxygen free and nitrogen free plasma ashing process in response to an observed change in the emission signal within the exhaust conduit.

14. The method of claim 12, wherein generating the second plasma comprises introducing an oxidizing gas into the exhaust conduit, wherein the oxidizing gas does not flow into the process chamber.

15. The method of claim 12, wherein the second plasma is free of an oxidizing gas.

16. The method of claim 12, wherein optically monitoring the emissive species comprises monitoring wavelengths of the emissive species correlating to reactant species present in the process chamber.

17. The method of claim 12, wherein optically monitoring the emissive species comprises monitoring wavelengths of the emissive species optically monitoring species produced by a reaction between the second plasma and the removed photoresist material and/or residues.

13. A method for determining an endpoint of an oxygen free and nitrogen free plasma ashing process used for stripping photoresist material and/or residues from a substrate having a carbon-containing low k dielectric material, comprising:

generating a first plasma in a process chamber in the absence of oxygen and nitrogen from a gas mixture comprising hydrogen or helium or a combination comprising at least one of the foregoing gases;

exposing the substrate provided in the process chamber to the first plasma to selectively remove photoresist material and/or residues from the substrate;

exhausting the removed photoresist material and/or residues from the process chamber into an exhaust conduit;

generating a second plasma in the exhaust conduit to generate emissive species; and

optically monitoring the emissive species, wherein an endpoint of the first plasma is detected when an intensity of the emissive species within the second plasma changes to an amount greater or less than a predetermined threshold.