METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20100055832A1
• Filed: 08/28/2009
• Published: 03/04/2010
• Est. Priority Date: 09/01/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo, TSUBUKU, Masashi
• Granted Patent: US 8,021,916 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/447 involving the application of pressure, e.g. thermo-compression bonding
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

To provide a method for manufacturing a thin film transistor in which contact resistance between an oxide semiconductor layer and source and drain electrode layers is small, the surfaces of the source and drain electrode layers are subjected to sputtering treatment with plasma and an oxide semiconductor layer containing In, Ga, and Zn is formed successively over the source and drain electrode layers without exposure of the source and drain electrode layers to air.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

performing a sputtering treatment on surfaces of source and drain electrode layers; and

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer includes indium, gallium and zinc.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the sputtering treatment is performed in an inert gas atmosphere.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the inert gas atmosphere includes rare gas.

5. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a substrate;

forming an insulating film over the gate electrode layer;

forming source and drain electrode layers end portions of which overlap with the gate electrode layer with the insulating film interposed therebetween;

performing a sputtering treatment on surfaces of the source and drain electrode layers; and

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the oxide semiconductor layer includes indium, gallium and zinc.

7. The method for manufacturing a semiconductor device according to claim 5, wherein the sputtering treatment is performed in an inert gas atmosphere.

8. The method for manufacturing a semiconductor device according to claim 7, wherein the inert gas atmosphere includes rare gas.

9. A method for manufacturing a semiconductor device comprising the steps of:

forming source and drain electrode layers over a substrate;

performing a sputtering treatment on surfaces of the source and drain electrode layers;

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air;

forming an insulating film over the oxide semiconductor layer; and

forming a gate electrode layer over a channel formation region of the oxide semiconductor layer with the insulating film interposed therebetween.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the oxide semiconductor layer includes indium, gallium and zinc.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the sputtering treatment is performed in an inert gas atmosphere.

12. The method for manufacturing a semiconductor device according to claim 11, wherein the inert gas atmosphere includes rare gas.

13. A method for manufacturing a semiconductor device comprising the steps of:

forming source and drain electrode layers over a substrate;

applying a voltage to gas containing an inert gas for producing plasma of the gas;

exposing surfaces of the source and drain electrode layers to the plasma so that the surfaces of the source and drain electrode layers are etched by the plasma; and

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air after exposing the surfaces of the source and drain electrode layers to the plasma.

14. The method for manufacturing a semiconductor device according to claim 13, wherein the oxide semiconductor layer includes indium, gallium and zinc.

15. The method for manufacturing a semiconductor device according to claim 13, wherein the inert gas is rare gas.

16. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a substrate;

forming an insulating film over the gate electrode layer;

forming source and drain electrode layers end portion of which overlap with the gate electrode layer with the insulating film interposed therebetween;

applying a voltage to gas containing an inert gas for producing plasma of the gas;

exposing surfaces of the source and drain electrode layers to the plasma so that the surfaces of the source and drain electrode layers are etched by the plasma; and

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air after exposing the surfaces of the source and drain electrode layers to the plasma.

17. The method for manufacturing a semiconductor device according to claim 16, wherein the oxide semiconductor layer includes indium, gallium and zinc.

18. The method for manufacturing a semiconductor device according to claim 16, wherein the inert gas is rare gas.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming source and drain electrode layers over a substrate;

applying a voltage to gas containing an inert gas for producing plasma of the gas;

exposing surfaces of the source and drain electrode layers to the plasma so that the surfaces of the source and drain electrode layers are etched by the plasma;

forming an oxide semiconductor layer over the source and drain electrode layers successively without exposure of the source and drain electrode layers to air after exposing the surfaces of the source and drain electrode layers to the plasma;

forming an insulating film over the oxide semiconductor layer; and

forming a gate electrode layer over a channel formation region of the oxide semiconductor layer with the insulating film interposed therebetween.

20. The method for manufacturing a semiconductor device according to claim 19, wherein the oxide semiconductor layer includes indium, gallium and zinc.

21. The method for manufacturing a semiconductor device according to claim 19, wherein the inert gas is rare gas.