METHOD FOR FORMING A SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate having a trench with a sidewall isolation;
removing the sidewall isolation in a portion of the trench;
forming a gate dielectric on the laid open sidewall;
forming a gate electrode adjacent to the gate dielectric, an upper surface of the gate electrode being located at a depth d1 below the surface of the semiconductor substrate;
removing the gate oxide above the gate electrode; and
forming an isolation simultaneously on the gate electrode and the semiconductor substrate such that the absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1.
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Accused Products
Abstract
A method for forming a semiconductor device. One embodiment provides a semiconductor substrate having a trench with a sidewall isolation. The sidewall isolation is removed in a portion of the trench. A gate dielectric is formed on the laid open sidewall. A gate electrode is formed adjacent to the date dielectric. The upper surface of the gate electrode is located at a depth d1 below the surface of the semiconductor substrate. The gate oxide is removed above the gate electrode. An isolation is formed simultaneously on the gate electrode and the semiconductor substrate such that the absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1.
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Citations
25 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having a trench with a sidewall isolation; removing the sidewall isolation in a portion of the trench; forming a gate dielectric on the laid open sidewall; forming a gate electrode adjacent to the gate dielectric, an upper surface of the gate electrode being located at a depth d1 below the surface of the semiconductor substrate; removing the gate oxide above the gate electrode; and forming an isolation simultaneously on the gate electrode and the semiconductor substrate such that the absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having a trench with a sidewall isolation; removing the sidewall isolation in a portion of the trench; forming a gate dielectric on the laid open sidewall; forming a gate electrode adjacent to the gate dielectric, an upper surface of the gate electrode being located at a depth d1 below the surface of the semiconductor substrate; removing the gate oxide above the gate electrode; and forming an isolation by thermal oxidation, simultaneously on the gate electrode and the semiconductor substrate such that the absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1. - View Dependent Claims (18, 19, 20)
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21. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having a trench with a sidewall isolation; removing the sidewall isolation in a portion of the trench; forming a gate dielectric on the laid open sidewall; forming a gate electrode adjacent to the gate dielectric, an upper surface of the gate electrode being located at a depth d1 below the surface of the semiconductor substrate; removing the gate oxide above the gate electrode; forming an isolation simultaneously on the gate electrode and the semiconductor substrate such that the absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1; and forming a second isolation on the first isolation. - View Dependent Claims (22, 23)
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24. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate; removing a sidewall isolation in a portion of a trench in the semiconductor substrate; forming a gate dielectric on the sidewall; forming a gate electrode adjacent to the gate dielectric, the upper surface of the gate electrode being located at a depth d1 below the surface of the semiconductor substrate; and forming a isolation on the gate electrode and the semiconductor substrate such that an absolute value of height difference d2 between the isolation over the gate electrode and the isolation over the semiconductor substrate is smaller than the depth d1. - View Dependent Claims (25)
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Specification