INTEGRATION CMOS COMPATIBLE OF MICRO/NANO OPTICAL GAIN MATERIALS

• US 20100055919A1
• Filed: 08/29/2008
• Published: 03/04/2010
• Est. Priority Date: 08/29/2008
• Status: Active Grant

• Current Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Original Assignee: BAE Systems Information and Electronic Systems Integration Incorporated (BAE Systems Plc)
• Inventors: Carothers, Daniel N.
• Granted Patent: US 8,288,290 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: G02B 2006/12078 Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A method is provided for the integration of an optical gain material into a Complementary metal oxide semiconductor device, the method comprising the steps of: configuring a workpiece from a silicon wafer upon which is disposed an InP wafer bearing an epitaxy layer; mechanically removing the InP substrate; etching the InP remaining on epitaxy layer with hydrochloric acid; depositing at least one Oxide pad on revealed the epitaxy layer; using the Oxide pad as a mask during a first pattern etch removing the epitaxy to an N level; etching with a patterned inductively coupled plasma (ICP) technique; isolating the device on the substrate with additional pattern etching patterning contacts, appling the contacts.

Claims

1. An optical gain material, the material comprising:

An InGaAlAs layer;

An InGaAsP layer disposed proximally to said InGaAlAs layer.

2. An integrated gain device, said device comprising;

An InGaAlAs/InGaAsP epitaxy layer;

A silicon substrate upon which said InGaAlAs/InGaAsP is disposed;

3. A method for the integration of an optical gain material into a Complementary metal oxide semiconductor device, said method comprising the steps of:

Configuring a workpiece from a silicon wafer upon which is disposed an InP wafer bearing an epitaxy layer;

Mechanically removing said InP substrate;

Etching said InP remaining on epitaxy layer with hydrochloric acid;

Depositing at least one Oxide pad on revealed said epitaxy layer.

Using said Oxide pad as a mask during a first pattern etch removing the epitaxy to an N level;

Etching with a patterned inductively coupled plasma (ICP) technique;

isolating the device on the substrate with additional pattern etching patterning contacts.

Appling said contacts.

4. The method according to claim 3, further comprising planarization of said epitaxy layer.

5. The method according to claim 4 further comprising bonding said epitaxial surface to said silicon wafer.