COMPOSITIONS FOR PROCESSING OF SEMICONDUCTOR SUBSTRATES

• US 20100056409A1
• Filed: 01/26/2006
• Published: 03/04/2010
• Est. Priority Date: 01/27/2005
• Status: Active Grant

• Current Assignee: Entegris Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Peters, Darryl W., Naghshineh, Shahri, Walker, Elizabeth, Oldak, Ewa, Yanders, Kevin P., Barnes, Jeffrey A.
• Granted Patent: US 7,922,823 B2
• Time in Patent Office: Days
• US Class Current: 510/175
• CPC Class Codes: C11D 11/0047 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 7/06 Hydroxides
• CPC Class Codes: C11D 7/26 containing oxygen
• CPC Class Codes: C11D 7/264 Aldehydes; Ketones; Acetals or ketals
• CPC Class Codes: C11D 7/265 Carboxylic acids or salts thereof
• CPC Class Codes: C11D 7/32 containing nitrogen
• CPC Class Codes: C11D 7/3218 Alkanolamines or alkanolimines
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers

Abstract

Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.

Claims

1. A composition comprising (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, wherein the complexing agent includes at least one component selected from the group consisting of acetic acid, acetone oxime, alanine, 5-aminotetrazole, ammonium benzoate, arginine, asparagine, aspartic acid, benzoic acid, benzotriazole (BTA), betaine, dimethyl glyoxime, fumaric acid, glutamic acid, glutamine, glutaric acid, glycerol, glycine, glycolic acid, glyoxylic acid, histidine, imidazole, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, malic acid, malonic acid, 2-mercaptobenzimidiazole, oxalic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, terephthalic acid, 1,2,4-triazole, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, and derivatives of the foregoing amino acids, with the provision that the complexing agent does not include citric acid.

3. The composition of claim 1, including about 0.001 to about 90 wt. % alkanolamine, about 0.00001 to about 40 wt. % quaternary ammonium hydroxide, and about 0.00001 to about 20 wt. % complexing agent, based on total weight of the composition.

7. The composition of claim 1, further comprising water.

10. The composition of claim 1, wherein the alkanolamine includes at least one species selected from the group consisting of aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, and C₁-C₈ alkanolamines.

11. The composition of claim 1, wherein the quaternary ammonium hydroxide is selected from the group consisting of choline, tetrabutylammoniumhydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrapropylammoniumhydroxide, and combinations thereof.

12. The composition of claim 1, having a pH in a range from 9 to 14.

16. The composition of claim 1, wherein the composition is devoid of gallic acid or ascorbic acid.

17. The composition of claim 1, wherein the composition is further characterized by (I), (II), or (III);

(I) comprising lactic acid and MBI;

(II) comprising monoethanolamine and triethanolamine;

or

(III) comprising benzoic acid.

20. The composition of claim 1, wherein the composition further comprises a residue material selected from the group consisting of post-CMP residue, post-etch residue, post-ash residue, and benzotriazole.

45. A method of making a microelectronic device, said method comprising removing undesired material from a microelectronic device substrate having same thereon or preparing a surface of said microelectronic device substrate for subsequent treatment, said method comprising using the composition of claim 1.

2. (canceled)

4-6. -6. (canceled)

8. (canceled)

9. (canceled)

13-15. -15. (canceled)

18. (canceled)

19. (canceled)

21. A method of processing a microelectronic device substrate to remove undesired material therefrom or to prepare a surface of said microelectronic device substrate for subsequent treatment, said method comprising contacting the microelectronic device substrate with an effective amount of a composition comprising (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, wherein the complexing agent includes at least one component selected from the group consisting of acetic acid, acetone oxime, alanine, 5-aminotetrazole, ammonium benzoate, arginine, asparagine, aspartic acid, benzoic acid, benzotriazole (BTA), betaine, dimethyl glyoxime, fumaric acid, glutamic acid, glutamine, glutaric acid, glycerol, glycine, glycolic acid, glyoxylic acid, histidine, imidazole, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, malic acid, malonic acid, 2-mercaptobenzimidiazole, oxalic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, terephthalic acid, 1,2,4-triazole, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, and derivatives of the foregoing amino acids, with the provision that the complexing agent does not include citric acid.

22. The method of claim 21, wherein the undesired material is selected from the group consisting of etch residue, ash residue, chemical mechanical polishing residue, and BTA.

27. The method of claim 21, wherein the composition includes about 0.001 to about 90 wt. % alkanolamine, about 0.00001 to about 40 wt. % quaternary ammonium hydroxide, and about 0.00001 to about 20 wt. % complexing agent, based on total weight of the composition.

31. The method of claim 21, wherein the composition includes water.

34. The method of claim 21, wherein the composition comprises alkanolamine including at least one species selected from the group consisting of aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, and C₁-C₈ alkanolamines;

and

wherein the composition comprises quaternary ammonium hydroxide selected from the group consisting of choline, tetrabutylammonium hydroxide, tetraethylammonium hydroxide, tetramethylammonium hydroxide, tetrapropylammonium hydroxide, and combinations thereof.

36. The method of claim 21, wherein the composition has a pH in a range from 9 to 14.

38. The method of claim 21, wherein the composition comprises components (i), (ii) and (iii) in relative proportions rendering the composition non-darkening in exposure to oxygen.

44. The method of claim 21, wherein the composition further comprises a residue material selected from the group consisting of post-CMP residue, post-etch residue, post-ash residue, and benzotriazole.

23-26. -26. (canceled)

28-30. -30. (canceled)

32. (canceled)

33. (canceled)

35. (canceled)

37. (canceled)

39-43. -43. (canceled)

46. A kit comprising, in one or more containers, reagents for forming a composition, wherein said composition comprises (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, wherein the complexing agent includes at least one component selected from the group consisting of acetic acid, acetone oxime, alanine, 5-aminotetrazole, ammonium benzoate, arginine, asparagine, aspartic acid, benzoic acid, benzotriazole (BTA), betaine, dimethyl glyoxime, fumaric acid, glutamic acid, glutamine, glutaric acid, glycerol, glycine, glycolic acid, glyoxylic acid, histidine, imidazole, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, malic acid, malonic acid, 2-mercaptobenzimidiazole, oxalic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, terephthalic acid, 1,2,4-triazole, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, and derivatives of the foregoing amino acids, with the provision that the complexing agent does not include citric acid, and wherein the kit is adapted to form a composition suitable for removing undesired material from a microelectronic device substrate having same thereon or preparing a surface of said microelectronic device substrate for subsequent treatment.