MULTIPLE PERFORMANCE MODE MEMORY SYSTEM

• US 20100057976A1
• Filed: 08/26/2008
• Published: 03/04/2010
• Est. Priority Date: 08/26/2008
• Status: Abandoned Application

• Current Assignee: SanDisk IL Ltd. (Western Digital Corporation)
• Original Assignee: SanDisk IL Ltd. (Western Digital Corporation)
• Inventors: Lasser, Menahem
• Application Number:
  US12/198,635
• Publication Number:
  US 20100057976A1
• Time in Patent Office: Days
• US Class Current: 711/103
• CPC Class Codes: G06F 13/385 for adaptation of a particular data processing system to different peripheral devices
• CPC Class Codes: G11C 16/20 Initialising; Data preset; Chip identification

Abstract

A method and system for controlling a write performance level of a memory is disclosed. The method includes receiving an input at the memory, and configuring the memory to an operation mode providing a write performance level and a storage capacity. The input may specify a storage capacity, a working area capacity, a write performance level, and/or a ratio of the storage capacity to the working area capacity. A desired write performance level may be set by receiving a software command or hardware setting. The storage capacity may be varied depending on whether the memory device has been formatted. As the storage capacity decreases, working area capacity of the memory device increases and write performance increases. Conversely, as the storage capacity increases, working area capacity decreases and write performance decreases.

Claims

1. A method for controlling a memory, comprising:

receiving an input at the memory;

if the input comprises a first input, configuring the memory to a first operation mode, the first operation mode providing a first write performance level and a first storage capacity; and

if the input comprises a second input, configuring the memory to a second operation mode, the second operation mode providing a second write performance level and a second storage capacity;

wherein;

the first write performance level is lower than the second write performance level;

the first storage capacity is larger than the second storage capacity; and

the first operation mode and the second operation mode store a same number of bits per cell in the memory.

2. The method of claim 1, further comprising prohibiting configuration of the memory to the second operation mode if the memory has already been formatted.

3. The method of claim 1, wherein receiving the input comprises receiving the input prior to or when the memory is being formatted.

4. The method of claim 1, wherein the first and second write performance levels comprise at least one of a burst write speed or a sustained write speed.

5. The method of claim 1, wherein:

configuring the memory to the first operation mode comprises allocating a first working area capacity for internal use within the memory, the first working area capacity less than or equal to the first storage capacity subtracted from a total capacity; and

configuring the memory to the second operation mode comprises allocating a second working area capacity for internal use within the memory, the second working area capacity less than or equal to the second storage capacity subtracted from the total capacity.

6. The method of claim 5, wherein the first and second working area capacities comprise at least one of a buffer or a garbage collection space.

7. The method of claim 1, wherein the input comprises a software command specifying at least one of a write performance level or a storage capacity.

8. The method of claim 7, wherein the software command is received from a host.

9. The method of claim 1, wherein the input comprises a hardware setting specifying at least one of a write performance level or a storage capacity.

10. The method of claim 9, wherein the hardware setting comprises at least one of a switch or a jumper.

11. The method of claim 1, wherein the input affects only a portion of a storage capacity of the memory.

12. A memory device, comprising:

a memory; and

a controller for controlling the memory and configured to;

receive an input at the memory;

if the input comprises a first input, configure the memory to a first operation mode, the first operation mode providing a first write performance level and a first storage capacity; and

if the input comprises a second input, configure the memory to a second operation mode, the second operation mode providing a second write performance level and a second storage capacity;

wherein;

the first write performance level is lower than the second write performance level;

the first storage capacity is larger than the second storage capacity; and

the first operation mode and the second operation mode store a same number of bits per cell in the memory.

13. The memory device of claim 12, wherein the controller is further configured to prohibit configuration of the memory to the second operation mode if the memory has already been formatted.

14. The memory device of claim 12, wherein receiving the input comprises receiving the input prior to or when the memory is being formatted.

15. The memory device of claim 12, wherein the first and second write performance levels comprise at least one of a burst write speed or a sustained write speed.

16. The memory device of claim 12, wherein:

the controller is further configured to, in the first operation mode, allocate a first working area capacity for internal use within the memory, the first working area capacity less than or equal to the first storage capacity subtracted from a total capacity; and

the controller is further configured to, in the second operation mode, allocate a second working area capacity for internal use within the memory, the second working area capacity less than or equal to the second storage capacity subtracted from the total capacity.

17. The memory device of claim 16, wherein the first and second working area capacities comprise at least one of a buffer or a garbage collection space.

18. The memory device of claim 12, wherein the input comprises a software command specifying at least one of a write performance level or a storage capacity.

19. The memory device of claim 18, wherein the memory device comprises an interface arranged to receive the software command.

20. The memory device of claim 12, wherein the memory device comprises a hardware interface for receiving the input, the input specifying at least one of a write performance level or a storage capacity.

21. The memory device of claim 20, wherein the hardware interface comprises at least one of a switch or a jumper.

22. The memory device of claim 12, wherein the input affects only a portion of a storage capacity of the memory.

23. A method for controlling a memory, comprising:

receiving an input at the memory;

if the input comprises a first input, configuring the memory to a first ratio; and

if the input comprises a second input, configuring the memory to a second ratio;

wherein;

the memory comprises a total capacity;

the first ratio comprises a ratio of a first storage capacity to a first working area capacity, the first working area capacity less than or equal to the first storage capacity subtracted from the total capacity;

the second ratio comprises a ratio of a second storage capacity to a second working area capacity, the second working area capacity less than or equal to the second storage capacity subtracted from the total capacity; and

the first ratio is higher than the second ratio.

24. The method of claim 23, further comprising prohibiting configuration of the memory to the second ratio if the memory has already been formatted.

25. The method of claim 23, wherein receiving the input comprises receiving the input prior to or when the memory is being formatted.

26. The method of claim 23, wherein the first and second working area capacities comprise at least one of a buffer or a garbage collection space.

27. The method of claim 23, wherein the input comprises at least one of a software command or a hardware setting specifying at least one of a write performance level or a storage capacity.