Substrate Processing Apparatus

• US 20100058984A1
• Filed: 09/03/2009
• Published: 03/11/2010
• Est. Priority Date: 09/10/2008
• Status: Abandoned Application

• Current Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Marubayashi, Tetsuya, Moriya, Atsushi
• Application Number:
  US12/553,143
• Publication Number:
  US 20100058984A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/06 Silicon

Abstract

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Claims

1. A substrate processing apparatus comprising:

a process chamber configured to accommodate a substrate;

a gas supply system configured to supply a process gas from a process gas source to an inside of the process chamber for processing the substrate;

a gas exhaust system configured to exhaust an inside atmosphere of the process chamber;

two or more vacuum pumps installed in series at the gas exhaust system; and

a bypass pipe connected between the gas supply system and the gas exhaust system for bypassing the process chamber,

wherein the most upstream vacuum pump of the vacuum pumps installed at the gas exhaust system is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

2. The substrate processing apparatus of claim 1, wherein one of the vacuum pumps, which is located at a downstream side of a joint part of the gas exhaust system with the bypass pipe, is a dry pump.

3. The substrate processing apparatus of claim 1, wherein one of the vacuum pumps, which is located at a downstream side of a joint part of the gas exhaust system with the bypass pipe, is a mechanical booster pump.

4. The substrate processing apparatus of claim 1, wherein the rest vacuum pumps, which are located at a downstream side of a joint part of the gas exhaust system with the bypass pipe, are sequentially a mechanical booster pump and a dry pump.

5. The substrate processing apparatus of claim 1, wherein the process gas source is plural in number, the bypass pipe is plural in number, and the number of the bypass pipes correspond to the number of the process gas sources,

wherein each of the bypass pipes is connected between the mechanical booster pump and the rest vacuum pumps located at the downstream side of the mechanical booster pump.