Method of manufacturing semiconductor device and cleaning apparatus

• US 20100059180A1
• Filed: 11/10/2009
• Published: 03/11/2010
• Est. Priority Date: 01/30/2006
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyazaki, Kunihiro, Matsumura, Tsuyoshi, Uozumi, Yoshihiro
• Granted Patent: US 7,850,818 B2
• Time in Patent Office: Days
• US Class Current: 156/345.270
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

The disclosure concerns a manufacturing method of a semiconductor device includes dry-etching a semiconductor substrate or a structure formed on the semiconductor substrate; supplying a solution onto the semiconductor substrate; measuring a specific resistance or a conductivity of the supplied solution; and supplying a removal solution for removing the etching residual material onto the semiconductor substrate for a predetermined period of time based on the specific resistance or the conductivity of the solution, when an etching residual material adhering to the semiconductor substrate or the structure is removed.

Claims

1-11. -11. (canceled)

12. A cleaning apparatus comprising:

a stage rotating a semiconductor substrate to which an etching residual material adheres, the stage controlling a temperature of the semiconductor substrate;

a first nozzle which discharges a solution onto a surface of the semiconductor substrate;

a measuring unit which measures a specific resistance or a conductivity of the solution discharged onto the semiconductor substrate;

a processing unit which determines time for supplying the removal solution onto the semiconductor substrate on the basis of the specific resistance or the conductivity of the solution; and

a second nozzle which discharges a removal solution for removing the etching residual material depending on the time determined by the processing unit.

13. The cleaning apparatus according to claim 12, wherein

the solution discharged from the first nozzle has an oxidation-reduction potential of 0.5 V or less.

14. The cleaning apparatus according to claim 12, wherein

the solution discharged from the first nozzle is pure water.

15. The cleaning apparatus according to claim 12, wherein

the processing unit determines time for supplying the removal solution onto the semiconductor substrate on the basis of a minimum value of the specific resistance or a maximum value of the conductivity of the solution.

16. The cleaning apparatus according to claim 12, further comprising:

a circulating tank which recovers the removal solution supplied onto the semiconductor substrate and circulates the removal solution to the second nozzle.