LED Structure

• US 20100059733A1
• Filed: 09/13/2006
• Published: 03/11/2010
• Est. Priority Date: 09/13/2006
• Status: Active Grant

• Current Assignee: Helio Optoelectronics Corporation
• Original Assignee: Helio Optoelectronics Corporation
• Inventors: Wen, Shih-Yi, Shei, Shih-Chang, Lee, Chun-Che, Chen, Ming-Hung
• Granted Patent: US 7,910,395 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05009 Bonding area integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/1703 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The first trenches or the second trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

Claims

1. An LED structure, comprising:

a first substrate having a first surface and a second surface;

an adhering layer formed on the first surface;

at least two first ohmic contact layers formed on the adhering layer;

at least two epi-layers wherein a first trench is formed between each two adjacent said epi-layers, and each said epi-layer includes;

a lower cladding layer formed on one said first ohmic contact layer;

an active layer formed on the lower cladding layer; and

an upper cladding layer formed on the active layer;

a first isolation layer covering exposed surfaces of the first ohmic contact layers and the upper cladding layers, and formed between each two adjacent said first ohmic contact layers, wherein the first isolation layer has first openings and second openings formed at the exposed surfaces of the upper cladding layers and the first ohmic contact layers, respectively;

at least two first electrically conducting plates, each formed in one said first opening and electrically connected to one said upper cladding layer; and

at least two second electrically conducting plates, each formed in one said second opening and electrically connected to one said first ohmic contact layer.

2. The LED structure of claim 1, wherein each of the first ohmic contact layers is a p-type ohmic contact layer.

3. The LED structure of claim 1, wherein the lower cladding layer is a p-type AlGaInP cladding layer and the upper cladding layer is an n-type AlGaInP cladding layer.

4. The LED structure of claim 1, wherein the active layer is in a form of a single hetero-structure (SH), a double hetero-structure (DH) or multiple quantum wells (MQW).

5. The LED structure of claim 1, wherein a second ohmic contact layer is formed between the upper cladding layer and the first electrically conducting plates.

6. The LED structure of claim 1, wherein the first substrate is a transparent substrate and the adhering layer is a transparent adhering layer, and a mirror layer is formed on the second surface.

7. The LED structure of claim 1, wherein the adhering layer is a transparent adhering layer, and a mirror layer is formed between the first substrate and the adhering layer.

8. The LED structure of claim 1, further comprising a submount that has a third surface whereon at least two third electrically conducting plates and at least two fourth electrically conducting plates are formed, wherein the submount is formed with a plurality of traces for electrically connecting the third electrically conducting plates and the fourth electrically conducting plates, each of the third electrically conducting plates and the fourth electrically conducting plates being electrically connected to the corresponding first electrically conducting plate and/or the second electrically conducting plate via one or more solder joints, and the first substrate being a transparent substrate while the adhering layer being a transparent adhering layer.

9. The LED structure of claim 8, wherein a mirror layer is formed on the third surface while not covering the third and fourth electrically conducting plates.

10. The LED structure of claim 8, wherein a mirror layer is formed on the first isolation layer.

11. The LED structure of claim 1, further comprising a first conductor layer that is formed with at least one conductor and covers the first isolation layer, each conductor having two opposite ends electrically connected to the second electrically conducting plate and the first electrically conducting plate of different units, respectively.

12. An LED structure, comprising:

a first substrate having a first surface and a second surface;

an adhering layer formed on the first surface;

at least two first ohmic contact layers formed on the adhering layer;

at least two epi-layers, wherein each said epi-layer includes;

a lower cladding layer formed on one said first ohmic contact layer;

an active layer formed on the lower cladding layer;

an upper cladding layer formed on the active layer; and

a second trench vertically passing through the upper cladding layer and the active layer and entering a part of the lower cladding layer;

a second isolation layer covering the upper cladding layers and formed between each two adjacent said epi-layers and between each two adjacent said first ohmic contact layers, wherein the second isolation layer has a third opening formed on each said upper cladding layer and a fourth opening formed at an inner side of each said second trench;

at least two fifth electrically conducting plates, each formed in one said third opening and electrically connected to one said upper cladding layer; and

at least two sixth electrically conducting plates, each formed in one said fourth opening, having an extending portion extending downward to vertically pass through the epi-layer and electrically connect with the first ohmic contact layer.

13. The LED structure of claim 12, wherein each of the first ohmic contact layers is a p-type ohmic contact layer.

14. The LED structure of claim 12, wherein the lower cladding layer is a p-type AlGaInP cladding layer and the upper cladding layer is an n-type AlGaInP cladding layer.

15. The LED structure of claim 12, wherein the active layer is in a form of a single hetero-structure (SH), a double hetero-structure (DH) or multiple quantum wells (MQW).

16. The LED structure of claim 12, wherein the second trench has the second isolation layer formed therein.

17. The LED structure of claim 12, wherein a second ohmic contact layer is formed between the upper cladding layer and the fifth electrically conducting plate.

18. The LED structure of claim 12, wherein the first substrate is a transparent substrate and the adhering layer is a transparent adhering layer, and a mirror layer is formed on the second surface.

19. The LED structure of claim 12, wherein the adhering layer is a transparent adhering layer, and a mirror layer is formed between the first substrate and the adhering layer.

20. The LED structure of claim 12, further comprising a submount that has a third surface whereon at least two third electrically conducting plates and at least two fourth electrically conducting plates are formed, wherein the submount is formed with a plurality of traces for electrically connecting the third electrically conducting plates and the fourth electrically conducting plates, each of the third electrically conducting plates and the fourth electrically conducting plates being electrically connected to the corresponding fifth electrically conducting plate and/or the sixth electrically conducting plate via one or more solder joints, and the first substrate being a transparent substrate while the adhering layer being a transparent adhering layer.

21. The LED structure of claim 20, wherein a mirror layer is formed on the submount while not covering the third and fourth electrically conducting plates.

22. The LED structure of claim 20, wherein a mirror layer is formed on the second isolation layer.

23. The LED structure of claim 12, wherein surfaces of the fifth electrically conducting plates and the sixth electrically conducting plates have an identical altitude.

24. The LED structure of claim 12, further comprising a second conductor layer that is formed with at least one conductor and covers the second isolation layer, each conductor having two opposite ends electrically connected to the fifth electrically conducting plate and the sixth electrically conducting plate of different units, respectively.