THIN FILM FIELD-EFFECT TRANSISTOR AND DISPLAY USING THE SAME

• US 20100059746A1
• Filed: 08/24/2009
• Published: 03/11/2010
• Est. Priority Date: 09/09/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Itai, Yuichiro
• Granted Patent: US 7,994,579 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.

Claims

1. A thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.

2. The thin film field-effect transistor according to claim 1, wherein the oxide comprising an element having a strong bonding force with respect to oxygen contained in the intermediate layer is an oxide containing at least one element selected from the group consisting of Ba, Ca, Ti, Fe, Ga, Mg, Al, Ge and Si.

3. The thin film field-effect transistor according to claim 1, wherein the resistance layer is an oxide semiconductor layer.

4. The thin film field-effect transistor according to claim 1, wherein the electric conductivity of the active layer is 10⁻

4 Scm<sup>−

1</sup> or more and less than 10² Scm<sup>−

1</sup>, and the ratio of the electric conductivity of the active layer to the electric conductivity of the resistance layer is from 10¹ to 10¹⁰.

5. The thin film field-effect transistor according to claim 1, wherein the intermediate layer further contains an oxide semiconductor.

6. The thin film field-effect transistor according to claim 4, wherein the electric conductivity of the active layer is 10⁻

1 Scm<sup>−

1</sup> or more and less than 10² Scm<sup>−

1</sup>.

7. The thin film field-effect transistor according to claim 4, wherein the ratio of the electric conductivity of the active layer to the electric conductivity of the resistance layer is from 10² to 10¹⁰.

8. The thin film field-effect transistor according to claim 7, wherein the ratio of the electric conductivity of the active layer to the electric conductivity of the resistance layer is from 10² to 10⁸.

9. The thin film field-effect transistor according to claim 1, wherein the oxide semiconductor of the active layer is an amorphous oxide.

10. The thin film field-effect transistor according to claim 3, wherein the oxide semiconductor of the resistance layer is an amorphous oxide.

11. The thin film field-effect transistor according to claim 5, wherein the oxide semiconductor of the intermediate layer is an amorphous oxide.

12. The thin film field-effect transistor according to claim 1, wherein the thickness of the active layer is thicker than the thickness of the resistance layer.

13. The thin film field-effect transistor according to claim 1, wherein the substrate is a flexible resin substrate.

14. A display using the thin film field-effect transistor according to claim 1.