METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE
First Claim
1. A method for manufacturing a thin film integrated circuit, comprising the steps of:
- forming a separation layer over an insulating substrate;
forming at least two thin film integrated circuits over the separation layer;
forming a groove between the two thin film integrated circuits to expose the separation layer;
attaching an antenna substrate provided with an opening and an antenna over the two thin film integrated circuits; and
separating the insulating substrate by introducing an etchant into the opening and removing the separation layer,wherein the two thin film integrated circuits are integrated by the antenna substrate.
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Accused Products
Abstract
Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.
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Citations
29 Claims
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1. A method for manufacturing a thin film integrated circuit, comprising the steps of:
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forming a separation layer over an insulating substrate; forming at least two thin film integrated circuits over the separation layer; forming a groove between the two thin film integrated circuits to expose the separation layer; attaching an antenna substrate provided with an opening and an antenna over the two thin film integrated circuits; and separating the insulating substrate by introducing an etchant into the opening and removing the separation layer, wherein the two thin film integrated circuits are integrated by the antenna substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An element substrate comprising:
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an insulating substrate; a separation layer over the insulating substrate; at least two thin film integrated circuits over the separation layer; and an antenna substrate provided opposite to the insulating substrate, wherein the antenna substrate includes an antenna and an opening, and wherein a groove is provided between the two thin film integrated circuits to correspond to the opening. - View Dependent Claims (18, 20, 22, 24, 26, 28)
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17. An element substrate comprising:
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an insulating substrate; a separation layer over the insulating substrate; at least two thin film integrated circuits over the separation layer; a connection region; and an antenna substrate provided opposite to the insulating substrate, wherein the antenna substrate includes an antenna and a first opening, wherein a groove is provided between the two thin film integrated circuits to correspond to the first opening, wherein a second opening is provided in the two thin film integrated circuits, and wherein the two thin film integrated circuits are integrated by the connection region. - View Dependent Claims (19, 21, 23, 25, 27, 29)
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Specification