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THIN-FILM TRANSISTOR AND PROCESS FOR ITS FABRICATION

  • US 20100059751A1
  • Filed: 04/16/2008
  • Published: 03/11/2010
  • Est. Priority Date: 04/27/2007
  • Status: Active Grant
First Claim
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1. A bottom gate type thin-film transistor comprising at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, wherein;

  • at an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less.

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