PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A photoelectric conversion device comprising:
- a thin film transistor placed on a substrate;
a photodiode connected to a drain electrode of the thin film transistor and including an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes;
a first interlayer insulating film covering at least the upper electrode;
a second interlayer insulating film placed in an upper layer of the first interlayer insulating film and covering the thin film transistor and the photodiode; and
a line connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.
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Accused Products
Abstract
A photoelectric conversion device includes a thin film transistor that is placed on a substrate, a photodiode that is connected to a drain electrode of the thin film transistor and includes an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes, a first interlayer insulating film that covers at least the upper electrode, a second interlayer insulating film that is placed in an upper layer of the first interlayer insulating film and covers the thin film transistor and the photodiode, and a line that is connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film.
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Citations
19 Claims
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1. A photoelectric conversion device comprising:
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a thin film transistor placed on a substrate; a photodiode connected to a drain electrode of the thin film transistor and including an upper electrode, a lower electrode and a photoelectric conversion layer placed between the upper and lower electrodes; a first interlayer insulating film covering at least the upper electrode; a second interlayer insulating film placed in an upper layer of the first interlayer insulating film and covering the thin film transistor and the photodiode; and a line connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a photoelectric conversion device comprising steps of:
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forming a thin film transistor on a substrate; forming a photodiode connected to a drain electrode of the thin film transistor and including an upper electrode, a lower electrode and a photoelectric conversion layer between the upper and lower electrodes, and a first interlayer insulating film covering at least the upper electrode; forming a second interlayer insulating film in an upper layer of the first interlayer insulating film so as to cover the thin film transistor and the photodiode; and forming a line connected to the upper electrode through a contact hole disposed in the first interlayer insulating film and the second interlayer insulating film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification