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ADHESION OF DIFFUSION BARRIER ON COPPER-CONTAINING INTERCONNECT ELEMENT

  • US 20100059889A1
  • Filed: 12/07/2007
  • Published: 03/11/2010
  • Est. Priority Date: 12/20/2006
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an interconnect element of a copper-containing interconnect material;

    a first dielectric layer of a first dielectric material that covers the interconnect element;

    wherein implanted particles are present in the first dielectric layer and in the interconnect element, and wherein a first interface region between the first dielectric layer and the interconnect element forms a diffusion-barrier against a diffusion of copper and comprises a mixture of the interconnect material and of the first dielectric material.

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