THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME AND ELECTRO-LUMINESCENCE DISPLAY PANEL HAVING THE SAME
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Accused Products
Abstract
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
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Citations
27 Claims
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1-12. -12. (canceled)
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13. A method of manufacturing a thin-film transistor comprising:
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forming a gate electrode on a base substrate; forming a gate insulation layer on the substrate to cover the gate electrode; forming an active layer on the gate insulation layer to cover the gate electrode; forming a buffer layer on the active layer to suppress an oxidation of the active layer; primarily etching first predefined portions of the buffer layer and the active layer; forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27-32. -32. (canceled)
Specification