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CONDUCTIVE MEMBER MANUFACTURING METHOD, AND ELECTRON SOURCE MANUFACTURING METHOD USING THE SAME

  • US 20100062674A1
  • Filed: 08/20/2009
  • Published: 03/11/2010
  • Est. Priority Date: 09/09/2008
  • Status: Active Grant
First Claim
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1. A manufacturing method of manufacturing at least plural conductive members in a first direction, each of the plural conductive members having plural first lines parallelly extending in the first direction and a second line extending in a second direction perpendicular to the first direction and connecting the plural first lines, and a width of the first line taken along the second direction being larger than a width of the second line taken along the first direction, the manufacturing method comprising:

  • a film forming step of forming a conductive film on a substrate;

    a step of applying a negative photosensitive resin on the conductive film;

    a first exposing step of exposing the negative photosensitive resin by using a first mask which has plural aperture portions, respectively extending in the first direction, at pitches same as those of the first lines;

    a second exposing step of exposing the negative photosensitive resin by using a second mask which has aperture portions, each extending in the second direction in a width same as a maximum length of the conductive member taken along the first direction, at pitches same as those of the conductive members in the first direction;

    a step of forming a first resist by developing the negative photosensitive resin double-exposed;

    a step of forming a first conductive film pattern by etching the conductive film with use of the first resist as a mask;

    a step of applying a negative photosensitive resin on the substrate after the etching;

    a step of forming a second resist by exposing and developing the negative photosensitive resin in a state that the second mask is being shifted toward the first direction; and

    a step of forming a second conductive film pattern by etching the first conductive film pattern with use of the second resist as a mask.

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