HIGH-FREQUENCY DEVICE AND COMMUNICATIONS APPARATUS

• US 20100062727A1
• Filed: 12/27/2007
• Published: 03/11/2010
• Est. Priority Date: 12/28/2006
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Hitachi Metals (Thailand) Ltd.
• Inventors: Fukamachi, Keisuke, Kemmochi, Shigeru, Hagiwara, Kazuhiro
• Granted Patent: US 8,326,344 B2
• Time in Patent Office: Days
• US Class Current: 455/74
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H04B 1/44 Transmit/receive switching
• CPC Class Codes: H05K 1/0243 Printed circuits associated with mounted high frequency components
• CPC Class Codes: H05K 2201/093 Layout of power planes, ground planes or power supply conductors, e.g. having special clearance holes therein reduction of cross-talk, noise or interference by patterned shielding planes, ground planes or power planes H05K1/0224
• CPC Class Codes: H05K 2201/09327 Special sequence of power, ground and signal layers in multilayer PCB
• CPC Class Codes: H05K 2201/09781 Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components

Abstract

A high-frequency device having high-frequency-signal-treating circuits in and on a laminate substrate comprising pluralities of dielectric layers having conductor patterns, the high-frequency-signal-treating circuits having amplifier circuits and switch circuits; terminals including input and output terminals of high-frequency signals, the power supply terminals of the amplifier circuits and the power supply terminals of the switch circuits being formed on one main surface of the laminate substrate; power supply lines each having one end connected to each of the power supply terminals of the amplifier circuits and power supply lines each having one end connected to each of the power supply terminals of the switch circuits being formed on one dielectric layer to constitute a power supply line layer; a first ground electrode being arranged on the side of the main surface with respect to the power supply line layer, the first ground electrode overlapping at least part of the power supply lines in a lamination direction; a second ground electrode being arranged on the opposite side of the first ground electrode with respect to the power supply line layer, the second ground electrode overlapping at least part of the power supply lines in a lamination direction; and the high-frequency-signal-treating circuits being arranged on the opposite side of the power supply line layer with respect to the second ground electrode.

Claims

1-14. -14. (canceled)

15. A high-frequency device having high-frequency-signal-treating circuits in and on a laminate substrate comprising pluralities of rectangular dielectric layers having conductor patterns,

said high-frequency-signal-treating circuits having amplifier circuits and switch circuits;

terminals including input and output terminals of high-frequency signals, the power supply terminals of said amplifier circuits and the power supply terminals of said switch circuits being formed on one main surface of said laminate substrate;

power supply lines each having one end connected each of the power supply terminals of said amplifier circuits and power supply lines each having one end connected to the power supply terminals of said switch circuits being formed on one dielectric layer to constitute a power supply line layer, and pluralities of power supply lines extending in two or more of triangular regions obtained by diagonally quartering the dielectric layer having said power supply line layer;

a first ground electrode being arranged on the side of said main surface with respect to said power supply line layer, said first ground electrode overlapping at least part of said power supply lines in a lamination direction;

a second ground electrode being arranged on the opposite side of said first ground electrode with respect to said power supply line layer, said second ground electrode overlapping at least part of said power supply lines in a lamination direction; and

said high-frequency-signal-treating circuits being arranged on the opposite side of said power supply line layer with respect to said second ground electrode.

16. The high-frequency device according to claim 15, wherein said terminals are arranged along the edges of said main surface, with said first ground electrode inside said terminals on said main surface.

17. The high-frequency device according to claim 15, wherein at least part of said power supply terminals overlap said second ground electrode in a lamination direction.

18. The high-frequency device according to claim 15, wherein said other ends of the power supply lines are connected to said high-frequency-signal-treating circuits through via-electrodes formed in a region overlapping said first ground electrode in a lamination direction.

19. The high-frequency device according to claim 15, wherein at least part of the power supply terminals are adjacent to each other.

20. The high-frequency device according to claim 15, wherein signal lines connected to said input and output terminals of high-frequency signals are not formed on said power supply line layer.

21. The high-frequency device according to claim 15, wherein grounded via-electrodes are arranged between power supply lines each having one end connected to each of the power supply terminals of said amplifier circuits and power supply lines each having one end connected to each of the power supply terminals of said switch circuits, which are formed on said power supply line layer.

22. The high-frequency device according to claim 15, wherein at least one signal line connected to said input and output terminals of high-frequency signals are formed in a region not overlapping said first ground electrode on said power supply line layer in a lamination direction.

23. The high-frequency device according to claim 15, wherein some of said power supply lines are constituted by a first line portion formed on the opposite side of said power supply line layer with respect to said second ground electrode, and second line portions formed on said power supply line layer and connected to both ends of the first line portion through via-electrodes, said first line portion crossing the other power supply lines on said power supply line layer when viewed from above in a lamination direction.

24. The high-frequency device according to claim 15, comprising a power supply terminal common to pluralities of amplifier circuits.

25. The high-frequency device according to claim 15, comprising a low-noise amplifier circuit as said amplifier circuit, one power supply terminal being commonly used for said switch circuits and said low-noise amplifier circuit.

26. The high-frequency device according to claim 15, wherein said input and output terminals of high-frequency signals and said power supply terminals are arranged via other terminals.

27. The high-frequency device according to claim 15, wherein said switch circuit switches the connection of an antenna terminal to the input and output terminals of said high-frequency signals, and wherein said amplifier circuit comprises a high-frequency amplifier circuit for amplifying transmitting signals input to said input terminal, and/or a low-noise amplifier circuit for amplifying received signals input through said antenna terminal.

28. A communications apparatus comprising the high-frequency device recited in claim 15.