VOLTAGE SWITCHABLE DIELECTRIC MATERIAL CONTAINING BORON COMPOUND

• US 20100065785A1
• Filed: 09/16/2009
• Published: 03/18/2010
• Est. Priority Date: 09/17/2008
• Status: Abandoned Application

• Current Assignee: Littelfuse Incorporated
• Original Assignee: Littelfuse Incorporated
• Inventors: Kosowsky, Lex, Fleming, Robert
• Application Number:
  US12/561,195
• Publication Number:
  US 20100065785A1
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: H01B 1/20 Conductive material dispersed in non-conductive organic material organic macromolecular compounds or compositions C08
• CPC Class Codes: H01B 3/002 Inhomogeneous material in general
• CPC Class Codes: H01C 7/105 Varistor cores H01C7/12 takes precedence
• CPC Class Codes: H05K 1/0254 High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection electrostatic discharge protection for electric apparatus in general H05K9/0067, H05K9/0079; Arrangements for regulating voltages or for using plural voltages
• CPC Class Codes: H05K 2201/0209 Inorganic, non-metallic particles
• CPC Class Codes: H05K 2201/0738 Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials

Abstract

A composition of voltage switchable dielectric (VSD) material that comprises Boron. According to embodiments, VSD material is formulated that includes particle constituents that include one or more of Boron-nitride polymers, Boron nanotubes, and/or Boron nanoparticles.

Claims

1. A composition of voltage switchable dielectric (VSD) material comprising Boron material.

2. The composition of claim 1, wherein the Boron material comprises a concentration of nano-dimensioned Boron particles.

3. The composition of claim 1, wherein the Boron material includes Boron-nitride.

4. The composition of claim 1, wherein the Boron material includes Boron-nitride polymers.

5. The composition of claim 2, wherein the Boron material includes Boron-nitride nanotubes.

6. The composition of claim 1, wherein the VSD material further comprises a concentration of high-aspect ratio nano-particles other than Boron material.

7. The composition of claim 5, wherein the concentration of high-aspect ratio nano-particles include organic high-aspect ratio particles.

8. The composition of claim 5, wherein the concentration of high-aspect ratio nano-particles include metallic high-aspect ratio particles.

9. The composition of claim 1, wherein the Boron material includes a combination of Boron-nitride polymers, Boron nanoparticles, and/or Boron nanorods.

11. The composition of claim 1, further comprising a concentration of particles that exceeds a percolation threshold of the VSD composition.

12. The composition of claim 1, further comprising a concentration of varistor particles.

13. A method for forming a composition of voltage switchable dielectric (VSD) material, the method comprising:

selecting particle constituents for the composition, wherein at least some of the particle constituents include Boron;

uniformly mixing the particle constituents in a binder.

14. The method of claim 13, wherein the Boron particle constituents correspond to one or more of Boron-nitride polymers, Boron nanotubes, and/or Boron nanoparticles.

15. The method of claim 14, further comprising adjusting an electrical characteristic of the VSD material by doping the Boron particle constituents with carbon.

20. The composition of claim 13, wherein the concentration of particles that include Boron-nitride.

21. The composition of claim 13, wherein the particle constituents exceed a percolation threshold of the composition.

22. The composition of claim 13, wherein the multiple types of particle constituents include a concentration of varistor particles.

23. The composition of claim 13, wherein the concentration of particles that include Boron further include Boron-nitride polymers.

24. The composition of claim 13, wherein the concentration of particles that include Boron further include Boron-nitride nanotubes.

16. A composition comprising:

a binder;

multiple types of particle constituents, including a concentration of conductor and/or semiconductor particle constituents, and a concentration of particles that include Boron; and

wherein said composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of a voltage that exceeds a characteristic voltage level of the composition.

17. The composition of claim 16, wherein the binder is a polymer.

18. The composition of claim 16, wherein the multiple types of particle constituents are mixed so that the composition is non-layered.

19. The composition of claim 16, wherein the concentration of particles that include Boron include nano-dimensioned Boron particles.