LIGHT EMITTING DEVICE
First Claim
1. A light emitting device comprising:
- a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), and a bonding layer made of a semiconductor; and
a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer,the p-type cladding layer being located more distant from the bonding interface than the light emitting layer, andthe p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less.
1 Assignment
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Accused Products
Abstract
A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.
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Citations
20 Claims
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1. A light emitting device comprising:
-
a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), and a bonding layer made of a semiconductor; anda substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer, the p-type cladding layer being located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less. - View Dependent Claims (2, 3, 4, 5, 6, 10, 11)
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7. A light emitting device comprising:
-
a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), and a bonding layer made of a semiconductor; anda substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer, the substrate being conductive and transparent to emission light from the light emitting layer, the p-type cladding layer being located more distant from the bonding interface than the light emitting layer, the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less, andthe light emitting layer and the p-type cladding layer being sequentially crystal grown on a surface of the bonding layer on the opposite side of the bonding interface. - View Dependent Claims (8, 9)
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12. A light emitting device comprising:
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a substrate; a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦
x≦
1, 0≦
y≦
1), and a contact layer;a first metal layer provided on the contact layer and being capable of reflecting emission light from the light emitting layer; and a second metal layer provided on the substrate and bonded to the first metal layer, the p-type cladding layer being located more distant from a bonding interface between the first metal layer and the second metal layer than the light emitting layer, and the p-type cladding layer having a carrier concentration of 0.5×
1017 cm−
3 or more and 3×
1017 cm−
3 or less. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification