LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
First Claim
1. An LED, comprising:
- a substrate;
a buffer layer on the substrate;
a first conductive type semiconductor layer on the buffer layer;
at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å
;
at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium;
an active layer directly on the at least one GaN layer; and
a second conductive type semiconductor layer on the active layer.
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Accused Products
Abstract
A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.
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Citations
19 Claims
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1. An LED, comprising:
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a substrate; a buffer layer on the substrate; a first conductive type semiconductor layer on the buffer layer; at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å
;at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An LED, comprising:
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a first conductive type semiconductor layer; at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å
;at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. An LED, comprising:
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a first conductive type semiconductor layer; at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness greater than 50 Å and
less than 200 Å
;at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium; an active layer directly on the at least one GaN layer; and a second conductive type semiconductor layer on the active layer, wherein a light is emitted in the active layer between the at least one GaN layer and the second conductive type semiconductor layer. - View Dependent Claims (19)
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Specification