LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

• US 20100065816A1
• Filed: 11/23/2009
• Published: 03/18/2010
• Est. Priority Date: 07/18/2003
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Seong Jae Kim
• Inventors: KIM, Seong Jae
• Granted Patent: US 7,884,388 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 Å.

Claims

1. An LED, comprising:

a substrate;

a buffer layer on the substrate;

a first conductive type semiconductor layer on the buffer layer;

at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å

;

at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer.

2. The LED according to claim 1, further comprising:

an undoped GaN layer between the buffer layer and the first conductive type semiconductor layer.

3. The LED according to claim 1, wherein an empirical formula of the at least one GaN layer having indium is given by InxGa1-xN and a range of x is given by 0<

x<

0.2.

4. The LED according to claim 1, wherein the active layer is formed of a multi-quantum well structure having an InGaN/GaN structure.

5. The LED according to claim 1, wherein the buffer layer is formed of a GaN-based material.

6. The LED according to claim 1, wherein the buffer layer comprises indium.

7. The LED according to claim 1, wherein a thickness of the at least one GaN layer is 10-30 Å

.

8. The LED according to claim 1, wherein the first conductive type semiconductor layer is formed of N-type GaN based semiconductor layer.

9. The LED according to claim 1, wherein the second conductive type semiconductor layer is formed of P-type GaN based semiconductor layer.

10. An LED, comprising:

a first conductive type semiconductor layer;

at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å

;

at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer.

11. The LED according to claim 10, wherein the active layer is a light emission region between the at least one GaN layer and the second conductive type semiconductor layer.

12. The LED according to claim 10, wherein the at least one GaN layer having indium reduces inconsistency of the lattice constant with the active layer.

13. The LED according to claim 10, wherein an empirical formula of the at least one GaN layer having indium is given by InxGa1-xN and a range of x is given by 0<

x<

0.2.

14. The LED according to claim 10, wherein the at least one GaN layer having indium has a thickness greater than 50 Å

.

15. The LED according to claim 10, wherein a thickness of the at least one GaN layer is 10-30 Å

.

16. The LED according to claim 10, wherein the active layer is formed of a multi-quantum well structure having an InGaN/GaN structure.

17. The LED according to claim 10, wherein the second conductive type semiconductor layer is formed of P-type GaN based semiconductor layer.

18. An LED, comprising:

a first conductive type semiconductor layer;

at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness greater than 50 Å and

less than 200 Å

;

at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium;

an active layer directly on the at least one GaN layer; and

a second conductive type semiconductor layer on the active layer,

wherein a light is emitted in the active layer between the at least one GaN layer and the second conductive type semiconductor layer.

19. The LED according to claim 18, wherein the at least one GaN layer having indium is formed directly on the first conductive type semiconductor layer.