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LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

  • US 20100065816A1
  • Filed: 11/23/2009
  • Published: 03/18/2010
  • Est. Priority Date: 07/18/2003
  • Status: Active Grant
First Claim
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1. An LED, comprising:

  • a substrate;

    a buffer layer on the substrate;

    a first conductive type semiconductor layer on the buffer layer;

    at least one GaN layer having indium on the first conductive type semiconductor layer, wherein the at least one GaN layer having indium has a thickness less than 200 Å

    ;

    at least one GaN layer on the at least one GaN layer having indium, wherein the at least one GaN layer is formed directly on the at least one GaN layer having indium;

    an active layer directly on the at least one GaN layer; and

    a second conductive type semiconductor layer on the active layer.

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