SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY
First Claim
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1. A semiconductor light-emitting device, comprising:
- a substrate used in growing a semiconductor crystal and made of single component;
a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate covering entire area between opposing side surfaces of the substrate,wherein the substrate has one side pattern continuously formed along all edges of the upper surface thereof by selectively etching the substrate, the side pattern consisting of protrusion or depression so as to scatter or diffract light, directed to side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device, and the upper surface of the substrate has no internal pattern,
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Abstract
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
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Citations
7 Claims
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1. A semiconductor light-emitting device, comprising:
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a substrate used in growing a semiconductor crystal and made of single component; a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate covering entire area between opposing side surfaces of the substrate, wherein the substrate has one side pattern continuously formed along all edges of the upper surface thereof by selectively etching the substrate, the side pattern consisting of protrusion or depression so as to scatter or diffract light, directed to side surfaces of the light-emitting device, to an upper portion or a lower portion of the light-emitting device, and the upper surface of the substrate has no internal pattern, - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor light-emitting device, comprising:
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a substrate used in growing a semiconductor crystal; a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate-covering entire area between opposing side surfaces the substrate, wherein the substrate has at least one side pattern and a plurality of internal patterns; and wherein the at least one side pattern is a protrusion or depression continuously formed along at least one edge of the upper surface thereof, and each of the internal patterns is convex or concave discontinuously formed on the upper surface thereof.
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Specification