High mobility tri-gate devices and methods of fabrication
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Abstract
A high mobility semiconductor assembly. In one exemplary aspect, the high mobility semiconductor assembly includes a first substrate having a first reference orientation located at a <110> crystal plane location on the first substrate and a second substrate formed on top of the first substrate. The second substrate has a second reference orientation located at a <100> crystal plane location on the second substrate, wherein the first reference orientation is aligned with the second reference orientation. In another exemplary aspect, the second substrate has a second reference orientation located at a <110> crystal plane location on the second substrate, wherein the second substrate is formed over the first substrate with the second reference orientation being offset to the first reference orientation by about 45 degrees.
104 Citations
49 Claims
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1-44. -44. (canceled)
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45. A high mobility semiconductor assembly comprising:
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a first substrate having a first reference orientation located at a <
110>
crystal plane location on the first substrate; anda second substrate formed on top of the first substrate, the second substrate having a second reference orientation located at a <
100>
crystal plane location on the second substrate,wherein the first reference orientation is aligned with the second reference orientation. - View Dependent Claims (46, 47, 48, 49)
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Specification