Structures and Methods for Reducing Dopant Out-diffusion from Implant Regions in Power Devices
First Claim
Patent Images
1. A semiconductor structure comprising:
- a drift region of a first conductivity type in a semiconductor region;
a well region of a second conductivity type over the drift region;
a source region of the first conductivity type in an upper portion of the well region;
a heavy body region of the second conductivity type extending in the well region, the heavy body region having a higher doping concentration than the well region;
a first diffusion barrier region at least partially surrounding the heavy body region; and
a gate electrode insulated from the semiconductor region by a gate dielectric.
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Abstract
A semiconductor structure comprises a drift region of a first conductivity type in a semiconductor region. A well region of a second conductivity type is over the drift region. A source region of the first conductivity type is in an upper portion of the well region. A heavy body region of the second conductivity type extends in the well region. The heavy body region has a higher doping concentration than the well region. A first diffusion barrier region at least partially surrounds the heavy body region. A gate electrode is insulated from the semiconductor region by a gate dielectric.
17 Citations
29 Claims
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1. A semiconductor structure comprising:
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a drift region of a first conductivity type in a semiconductor region; a well region of a second conductivity type over the drift region; a source region of the first conductivity type in an upper portion of the well region; a heavy body region of the second conductivity type extending in the well region, the heavy body region having a higher doping concentration than the well region; a first diffusion barrier region at least partially surrounding the heavy body region; and a gate electrode insulated from the semiconductor region by a gate dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor structure comprising:
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a drift region of a first conductivity type in a semiconductor region; a well region of a second conductivity type over the drift region; a source region of the first conductivity type in an upper portion of the well region; a first diffusion barrier region extending between the source region and the well region; a heavy body region of the second conductivity type extending in the well region, the heavy body region having a higher doping concentration than the well region; and a gate electrode insulated from the semiconductor region by a gate dielectric. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of forming a semiconductor structure, the method comprising:
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forming a well region of a first conductivity type in a semiconductor region; forming a source region of the second conductivity type in an upper portion of the well region; forming a heavy body region of the first conductivity type in the well region, the heavy body region having a higher doping concentration than the well region; forming a first diffusion barrier region in the well region; forming a gate electrode; and forming a gate dielectric extending between the gate electrode and the semiconductor region, wherein the first diffusion barrier layer at least partially surrounds the heavy body region. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method of forming a semiconductor structure, the method comprising:
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forming a drift region of a first conductivity type in a semiconductor region; forming a well region of a second conductivity type over the drift region; forming a source region of the first conductivity type in an upper portion of the well region; forming a first diffusion barrier region in the well region; forming a heavy body region of the second conductivity type in the well region, the heavy body region having a higher doping concentration than the well region; forming a gate electrode; and forming a gate dielectric, the gate dielectric insulating the gate electrode from the semiconductor region, wherein the first diffusion barrier region extends between the source region and the well region. - View Dependent Claims (26, 27, 28, 29)
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Specification