Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor
First Claim
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1. A method of etching a sacrificial layer, comprising the steps of:
- forming a sacrificial layer having a protrusive shape on a base layer;
forming a covering film covering the sacrificial layer;
forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer; and
etching the sacrificial layer after the formation of the protective film.
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Abstract
The method of etching a sacrificial layer according to the present invention includes the steps of forming a sacrificial layer having a protrusive shape on a base layer, forming a covering film covering the sacrificial layer, forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer, and etching the sacrificial layer after the formation of the protective film.
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Citations
7 Claims
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1. A method of etching a sacrificial layer, comprising the steps of:
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forming a sacrificial layer having a protrusive shape on a base layer; forming a covering film covering the sacrificial layer; forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer; and etching the sacrificial layer after the formation of the protective film. - View Dependent Claims (2)
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3. A method of manufacturing an MEMS device, comprising the steps of:
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forming a sacrificial layer having a protrusive shape on a surface of a substrate; forming a covering film covering the sacrificial layer; forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer; and working the covering film into a hollow supporting film supported in a state having a hollow portion between the same and the surface of the substrate by removing the sacrificial layer by etching thereby forming a space between the covering film and the substrate.
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4. An MEMS device comprising:
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a substrate; a hollow supporting film, integrally having an opposed portion opposed to a surface of the substrate at an interval, a step portion formed on the surface of the substrate and a side portion connecting the opposed portion and the step portion with each other, supported in a state having a hollow portion between the same and the surface of the substrate; and a protective film selectively formed on the side portion of the hollow supporting film.
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5. An MEMS sensor comprising:
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a substrate; a vibrating film opposed to the substrate at an interval on a side of the substrate and vibratile in the opposed direction; and a counter electrode, made of a conductive material, opposed to the vibrating film at an interval on a side of the vibrating film opposite to the substrate, wherein the vibrating film includes a metal electrode and a resin material film covering the metal electrode. - View Dependent Claims (6, 7)
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Specification