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Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor

  • US 20100065930A1
  • Filed: 09/17/2009
  • Published: 03/18/2010
  • Est. Priority Date: 09/18/2008
  • Status: Abandoned Application
First Claim
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1. A method of etching a sacrificial layer, comprising the steps of:

  • forming a sacrificial layer having a protrusive shape on a base layer;

    forming a covering film covering the sacrificial layer;

    forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer; and

    etching the sacrificial layer after the formation of the protective film.

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