Semiconductor Device

• US 20100065952A1
• Filed: 09/09/2009
• Published: 03/18/2010
• Est. Priority Date: 09/18/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Eguchi, Shingo, Oikawa, Yoshiaki
• Granted Patent: US 9,177,978 B2
• Time in Patent Office: Days
• US Class Current: 257/679
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.

Claims

1. A semiconductor device comprising:

a first insulator;

a circuit including a thin film transistor over the first insulator;

an antenna over the circuit and electrically connected to the circuit; and

a second insulator over the antenna,

wherein a first conductive film is provided between the first insulator and the circuit, and

wherein a second conductive film is provided between the second insulator and the antenna.

2. The semiconductor device according to claim 1, wherein each of the first insulator and the second insulator has a structure in which a fibrous body is impregnated with an organic resin.

3. The semiconductor device according to claim 1, wherein the first conductive film and the second conductive film are electrically connected to each other.

4. The semiconductor device according to claim 1, wherein the first insulator has a structure in which a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

5. The semiconductor device according to claim 1, wherein the first insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

6. The semiconductor device according to claim 1, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

7. The semiconductor device according to claim 1, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

8. The semiconductor device according to claim 1, wherein the antenna comprises a material selected from the group consisting of titanium, molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc and iron.

9. A semiconductor device comprising:

a first insulator;

a circuit including a thin film transistor provided over the first insulator;

an antenna which is provided over the circuit and is electrically connected to the circuit; and

a second insulator provided over the antenna,

wherein a first conductive film is provided between the first insulator and the circuit, and

wherein a second conductive film is provided between the circuit and the antenna.

10. The semiconductor device according to claim 9, wherein each of the first insulator and the second insulator has a structure where a fibrous body is impregnated with an organic resin.

11. The semiconductor device according to claim 9, wherein the first conductive film and the second conductive film are electrically connected to each other.

12. The semiconductor device according to claim 9, wherein the first insulator has a structure where a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

13. The semiconductor device according to claim 9, wherein the first insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

14. The semiconductor device according to claim 9, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

15. The semiconductor device according to claim 9, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

16. The semiconductor device according to claim 9, wherein the antenna comprises a material selected from the group consisting of titanium, molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc and iron.

17. A semiconductor device comprising:

a first insulator;

a first conductive film provided over the first insulator;

a first insulating film provided over the first conductive film;

a circuit including a thin film transistor provided over the first insulating film;

an antenna which is provided over the circuit and is electrically connected to the circuit;

a second insulating film provided over the antenna;

a second conductive film provided over the second insulating film; and

a second insulator provided over the second conductive film.

18. The semiconductor device according to claim 17, wherein each of the first insulator and the second insulator has a structure where a fibrous body is impregnated with an organic resin.

19. The semiconductor device according to claim 17, wherein the first conductive film and the second conductive film are electrically connected to each other.

20. The semiconductor device according to claim 17, wherein the first insulator has a structure where a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

21. The semiconductor device according to claim 17, wherein the first insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

22. The semiconductor device according to claim 17, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the organic resin comprises a material selected from the group consisting of epoxy resin, unsaturated polyester resin, polyimide resin, bismaleimide triazine resin, cyanate resin, polyphenylene oxide resin, polyetherimide resin and fluoropolymer.

23. The semiconductor device according to claim 17, wherein the second insulator has a structure where a fibrous body is impregnated with an organic resin, and the fibrous body comprises a material selected from the group consisting of polyvinyl alcohol fiber, polyester fiber, polyamide fiber, polyethylene fiber, aramide fiber, polyparaphenylene benzobisoxazole fiber, glass fiber and carbon fiber.

24. The semiconductor device according to claim 17, wherein the antenna comprises a material selected from the group consisting of titanium, molybdenum, tungsten, aluminum, copper, silver, gold, nickel, platinum, palladium, iridium, rhodium, tantalum, cadmium, zinc and iron.

25. The semiconductor device according to claim 17, wherein the first insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and organic resin.

26. The semiconductor device according to claim 17, wherein the second insulating film comprises a material selected from the group consisting of silicon oxide, silicon nitride and organic resin.