Methods for Manufacturing and Operating a Semiconductor Device
First Claim
1. A method for driving a capacitor in a semiconductor component, the method comprising:
- (a) generating a first voltage between a first node and a second node;
(b) for a first period of time, applying the first voltage to the capacitor by coupling a first capacitor electrode to the first node and coupling a second capacitor electrode to the second node;
(c) for a second period of time after the first period of time, applying the first voltage to the capacitor by coupling the first capacitor electrode to the second node and coupling the second capacitor electrode to the first node; and
(d) repeating steps (b) and (c).
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Abstract
A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.
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Citations
20 Claims
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1. A method for driving a capacitor in a semiconductor component, the method comprising:
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(a) generating a first voltage between a first node and a second node; (b) for a first period of time, applying the first voltage to the capacitor by coupling a first capacitor electrode to the first node and coupling a second capacitor electrode to the second node; (c) for a second period of time after the first period of time, applying the first voltage to the capacitor by coupling the first capacitor electrode to the second node and coupling the second capacitor electrode to the first node; and (d) repeating steps (b) and (c). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device, the method comprising:
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providing a first capacitor electrode, a second capacitor electrode, and a dielectric between the first capacitor electrode and the second capacitor electrode; connecting a first output of a changeover arrangement to the first capacitor electrode and a second output of the changeover arrangement to the second capacitor electrode; coupling a first switch between the first output and the second output such that the first switch has a first position that couples the first input to the first output and a second position that couples the first input to the second output; and coupling a second switch between the first output and the second output such that the second switch has a first position that couples the second input to the second output and a second position that couples the second input to the first output. - View Dependent Claims (14, 15, 16)
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17. A method for operating a semiconductor device, the method comprising:
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(a) applying a first voltage to a capacitor for a first period of time wherein the first voltage comprises a voltage having a first polarity and wherein the first voltage is applied between a first input and a second input; (b) applying a second voltage to the capacitor for a second period of time wherein the second voltage comprises a voltage having a second polarity and wherein the second voltage is applied between the first input and the second input; (c) repeating steps (a) and (b). - View Dependent Claims (18, 19, 20)
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Specification