METHODS FOR ELECTRON-BEAM INDUCED DEPOSITION OF MATERIAL INSIDE ENERGETIC-BEAM MICROSCOPES

• US 20100068408A1
• Filed: 09/16/2008
• Published: 03/18/2010
• Est. Priority Date: 09/16/2008
• Status: Abandoned Application

• Current Assignee: Omniprobe Inc. (Oxford Instruments PLC)
• Original Assignee: Omniprobe Inc. (Oxford Instruments PLC)
• Inventors: Zaykova-Feldman, Lyudmila, Moore, Thomas M., Marchman, Herschel M., Kruger, Rocky
• Application Number:
  US12/211,638
• Publication Number:
  US 20100068408A1
• Time in Patent Office: Days
• US Class Current: 427/532
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/48 by irradiation, e.g. photolysis, radiolysis, particle radiation
• CPC Class Codes: C23C 16/483 using coherent light, UV to IR, e.g. lasers
• CPC Class Codes: C23C 16/487 using electron radiation

Abstract

We disclose method for materials deposition on a surface inside an energetic-beam instrument, where the energetic beam instrument is provided with a laser beam, an electron beam, and a source of precursor gas. The electron beam is focused on the surface, and the laser beam is focused to a focal point that is at a distance above the surface of about 5 microns to one mm, preferably from 5 to 50 microns. The focal point of the laser beam will thus be within the stream of precursor gas injected at the sample surface, so that the laser beam will facilitate reactions in this gas cloud with less heating of the surface. A second laser may be used for cleaning the surface.

Claims

1. A method for materials deposition on a surface inside an energetic-beam:

instrument, where the energetic beam instrument comprises a laser beam, an electron beam, and a source of precursor gas;

the method comprising;

focusing the electron beam on the surface;

focusing the laser beam to a focal point at a distance above the surface;

injecting the precursor gas near the surface,

so that the precursor gas forms a stream including the focal point of the laser beam;

applying one or more pulses of the laser beam;

applying one or more pulses of the electron beam.

2. The method of claim 1 where the one or more electron-beam pulses are applied at substantially the same time as the one or more pulses of the laser beam.

3. The method of claim 1 further comprising:

cooling the surface before applying the pulses of the laser beam and the electron beam.

4. The method of claim 1, where the distance above the surface is in the range of about 5 microns to about one mm.

5. The method of claim 1, where the distance above the surface is in the range of about 5 microns to about 50 microns.

6. The method of claim 1 where the laser beam has a wavelength capable of causing photolytic dissasociation of the precursor gas.

7. The method of claim 1, further comprising:

applying one or more laser pulses to the surface for cleaning the surface before injecting the precursor gas.

8. The method of claim 6, where the one or more laser pulses applied to the surface before injecting the precursor gas are emitted from a second laser.

9. The method of claim 1, further comprising:

stopping the injection of the precursor gas after applying the one or more laser pulses and the one or more electron beam pulses; and

,

applying one or more laser pulses to the surface for cleaning the surface after stopping the injection of the precursor gas.

10. The method of claim 9, where the one or more laser pulses applied to the surface after stopping the injection of the precursor gas are emitted from a second laser.

12. The method of claim 10, where the one or more electron-beam pulses are applied at substantially the same time as the one or more pulses of the first laser beam.

11. A method for materials deposition on a surface inside an energetic-beam instrument, where the energetic beam instrument comprises a laser beam, a second laser beam, an electron beam, and a source of precursor gas;

the method comprising;

focusing the electron beam on the surface;

focusing the first laser beam to a focal point at in the range of about 5 microns to about one mm above the surface;

where the first laser beam has a wavelength capable of causing photolytic dissasociation of the precursor gas;

applying one or more laser pulses from the second laser beam to the surface for cleaning the surface before injecting the precursor gas;

cooling the surface;

injecting the precursor gas near the surface,

so that the precursor gas forms a stream including the focal point of the first laser beam;

applying one or more pulses of the first laser beam;

applying one or more pulses of the electron beam.