Pattern forming method and device production method
First Claim
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1. A pattern forming method for forming a pattern on an object, the method comprising:
- forming, on the object, first and second photosensitive layers having different photosensitive characteristics;
exposing the first and second photosensitive layers via a pattern; and
developing the first and second photosensitive layers.
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Abstract
A pattern forming method includes coating, on a wafer, a negative resist and a positive resist which has a higher sensitivity; exposing the positive resist and the negative resist on the wafer with an image of a line-and-space pattern; and developing the positive resist and the negative resist in a direction parallel to a normal line of a surface of the wafer. A fine pattern, which exceeds the resolution limit of an exposure apparatus, can be formed by using the lithography process without performing the overlay exposure.
17 Citations
43 Claims
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1. A pattern forming method for forming a pattern on an object, the method comprising:
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forming, on the object, first and second photosensitive layers having different photosensitive characteristics; exposing the first and second photosensitive layers via a pattern; and developing the first and second photosensitive layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 41)
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18. A pattern forming method for forming a pattern on an object, the method comprising:
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forming a first photosensitive layer, an intermediate layer, and a second photosensitive layer on the object; exposing the first photosensitive layer, the intermediate layer, and the second photosensitive layer via a pattern; and developing the first photosensitive layer, the intermediate layer, and the second photosensitive layer. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 42)
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30. A pattern forming method comprising:
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forming a photosensitive lower layer on a substrate; forming a photosensitive upper layer on the lower layer; irradiating a light onto the upper layer formed on the lower layer via a predetermined pattern to simultaneously expose the upper layer and the lower layer with the light; developing the exposed upper layer such that a first area corresponding to the predetermined pattern remains in the upper layer; developing the exposed lower layer by using the first area of the upper layer as a mask such that a second area corresponding to the predetermined pattern and a masked area positioned under the first area of the upper layer remain in the lower layer; and developing the substrate by using the second area and the masked area of the lower layer as masks to thereby form, on the substrate, a pattern corresponding to the second area and the masked area. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 43)
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Specification